JPS648673A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS648673A
JPS648673A JP62164768A JP16476887A JPS648673A JP S648673 A JPS648673 A JP S648673A JP 62164768 A JP62164768 A JP 62164768A JP 16476887 A JP16476887 A JP 16476887A JP S648673 A JPS648673 A JP S648673A
Authority
JP
Japan
Prior art keywords
film
gate
type region
polycrystalline
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164768A
Other languages
Japanese (ja)
Inventor
Takayuki Kito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP62164768A priority Critical patent/JPS648673A/en
Publication of JPS648673A publication Critical patent/JPS648673A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the necessity of a polycrystalline Si gate or an oxide film and to resultantly prevent an impurity distribution due to a boundary movement of Si-SiO2 by ion implanting and diffusing B and As and the like with the polycrystalline Si gate and a resist film as masks when a P-channel and N<+> type region are formed. CONSTITUTION:After a polycrystalline silicon is deposited on a whole oxide film 51 formed by heat treating, and a polycrystalline Si gate 60 is formed by patterning. Thereafter, the whole surface is coated with a resist film, and patterned to form a resist film 100 to become a mask. With the gate 60 and the film 100 as masks B is ion implanted, and thermally diffused to form a P-type region 80 which becomes a channel. With the gate 60 and the film 100 as masks As and P are ion implanted, and an N<+> type region which becomes a source is formed by thermally diffusing. Thereafter, windows are so opened at the film 100, a gate oxide film 51 and a PSG film 90 as to expose part of the region 80 and all a P-type region 40, and wired with aluminum.
JP62164768A 1987-06-30 1987-06-30 Manufacture of semiconductor device Pending JPS648673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164768A JPS648673A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164768A JPS648673A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS648673A true JPS648673A (en) 1989-01-12

Family

ID=15799562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164768A Pending JPS648673A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS648673A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945484A (en) * 1996-11-28 1999-08-31 Kabushiki Kaisha Pilot Water-in-oil type disperse ink
US6120590A (en) * 1996-12-12 2000-09-19 Mitsubishi Pencil Kabushiki Kaisha Water-base ink having metallic lustrous color for ballpoint pen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914676A (en) * 1982-07-16 1984-01-25 Nec Corp Manufacture of vertical type field effect transistor
JPS5980969A (en) * 1982-11-01 1984-05-10 Nec Corp Manufacture of field-effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914676A (en) * 1982-07-16 1984-01-25 Nec Corp Manufacture of vertical type field effect transistor
JPS5980969A (en) * 1982-11-01 1984-05-10 Nec Corp Manufacture of field-effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945484A (en) * 1996-11-28 1999-08-31 Kabushiki Kaisha Pilot Water-in-oil type disperse ink
US6120590A (en) * 1996-12-12 2000-09-19 Mitsubishi Pencil Kabushiki Kaisha Water-base ink having metallic lustrous color for ballpoint pen

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