JPS59136935A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59136935A
JPS59136935A JP58011847A JP1184783A JPS59136935A JP S59136935 A JPS59136935 A JP S59136935A JP 58011847 A JP58011847 A JP 58011847A JP 1184783 A JP1184783 A JP 1184783A JP S59136935 A JPS59136935 A JP S59136935A
Authority
JP
Japan
Prior art keywords
film
sio2 film
sio2
pattern
silanol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58011847A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0148652B2 (en:Method
Inventor
Kohei Eguchi
江口　公平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58011847A priority Critical patent/JPS59136935A/ja
Publication of JPS59136935A publication Critical patent/JPS59136935A/ja
Publication of JPH0148652B2 publication Critical patent/JPH0148652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Weting (AREA)
JP58011847A 1983-01-27 1983-01-27 半導体装置の製造方法 Granted JPS59136935A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58011847A JPS59136935A (ja) 1983-01-27 1983-01-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58011847A JPS59136935A (ja) 1983-01-27 1983-01-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59136935A true JPS59136935A (ja) 1984-08-06
JPH0148652B2 JPH0148652B2 (en:Method) 1989-10-20

Family

ID=11789108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58011847A Granted JPS59136935A (ja) 1983-01-27 1983-01-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59136935A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4682408A (en) * 1985-04-01 1987-07-28 Matsushita Electronics Corporation Method for making field oxide region with self-aligned channel stop implantation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649526A (en) * 1979-09-29 1981-05-06 Toshiba Corp Manufacture of semiconductor device
JPS5718327A (en) * 1980-07-09 1982-01-30 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5732640A (en) * 1980-08-06 1982-02-22 Mitsubishi Electric Corp Production of semiconductor device
JPS5768035A (en) * 1980-10-15 1982-04-26 Toshiba Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649526A (en) * 1979-09-29 1981-05-06 Toshiba Corp Manufacture of semiconductor device
JPS5718327A (en) * 1980-07-09 1982-01-30 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5732640A (en) * 1980-08-06 1982-02-22 Mitsubishi Electric Corp Production of semiconductor device
JPS5768035A (en) * 1980-10-15 1982-04-26 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4682408A (en) * 1985-04-01 1987-07-28 Matsushita Electronics Corporation Method for making field oxide region with self-aligned channel stop implantation

Also Published As

Publication number Publication date
JPH0148652B2 (en:Method) 1989-10-20

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