JPH0148652B2 - - Google Patents
Info
- Publication number
- JPH0148652B2 JPH0148652B2 JP58011847A JP1184783A JPH0148652B2 JP H0148652 B2 JPH0148652 B2 JP H0148652B2 JP 58011847 A JP58011847 A JP 58011847A JP 1184783 A JP1184783 A JP 1184783A JP H0148652 B2 JPH0148652 B2 JP H0148652B2
- Authority
- JP
- Japan
- Prior art keywords
- sio
- film
- pattern
- photoresist
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/00—
Landscapes
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58011847A JPS59136935A (ja) | 1983-01-27 | 1983-01-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58011847A JPS59136935A (ja) | 1983-01-27 | 1983-01-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59136935A JPS59136935A (ja) | 1984-08-06 |
| JPH0148652B2 true JPH0148652B2 (en:Method) | 1989-10-20 |
Family
ID=11789108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58011847A Granted JPS59136935A (ja) | 1983-01-27 | 1983-01-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59136935A (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61226942A (ja) * | 1985-04-01 | 1986-10-08 | Matsushita Electronics Corp | 半導体集積回路の素子間分離方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5649526A (en) * | 1979-09-29 | 1981-05-06 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5718327A (en) * | 1980-07-09 | 1982-01-30 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5732640A (en) * | 1980-08-06 | 1982-02-22 | Mitsubishi Electric Corp | Production of semiconductor device |
| JPS5768035A (en) * | 1980-10-15 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
-
1983
- 1983-01-27 JP JP58011847A patent/JPS59136935A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59136935A (ja) | 1984-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58210634A (ja) | 半導体装置の製造方法 | |
| JPH07118504B2 (ja) | 半導体デバイスの製造法 | |
| US5397733A (en) | Method for the construction of field oxide film in semiconductor device | |
| JPH0148652B2 (en:Method) | ||
| JPS586306B2 (ja) | ハンドウタイソウチノ セイゾウホウホウ | |
| JPH0427703B2 (en:Method) | ||
| JPS63228732A (ja) | 半導体装置の製造方法 | |
| JPH0346977B2 (en:Method) | ||
| JPS6387741A (ja) | 半導体装置の製造方法 | |
| JPH0226783B2 (en:Method) | ||
| JPS60258964A (ja) | 半導体装置の製造方法 | |
| JPH079930B2 (ja) | 半導体装置の製造方法 | |
| JPH0478013B2 (en:Method) | ||
| JP2570729B2 (ja) | 半導体装置の製造方法 | |
| JPH0194623A (ja) | 多層配線半導体装置の製造方法 | |
| JPS63228730A (ja) | 半導体集積回路の製造方法 | |
| JPS62104078A (ja) | 半導体集積回路装置の製造方法 | |
| JPS58115834A (ja) | 半導体装置の製造方法 | |
| JPS58213444A (ja) | 半導体装置の製造方法 | |
| JPH035656B2 (en:Method) | ||
| JPS60235436A (ja) | 半導体装置の製造方法 | |
| JPH0458538A (ja) | 半導体装置の製造方法 | |
| JPS60128635A (ja) | 素子分離領域の形成方法 | |
| JPS58158968A (ja) | 半導体装置の製造法 | |
| JPS6279625A (ja) | 半導体装置の製造方法 |