JPS59123272A - 化合物半導体装置 - Google Patents

化合物半導体装置

Info

Publication number
JPS59123272A
JPS59123272A JP57229710A JP22971082A JPS59123272A JP S59123272 A JPS59123272 A JP S59123272A JP 57229710 A JP57229710 A JP 57229710A JP 22971082 A JP22971082 A JP 22971082A JP S59123272 A JPS59123272 A JP S59123272A
Authority
JP
Japan
Prior art keywords
semiconductor layer
type
xas
value
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57229710A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0355980B2 (enrdf_load_stackoverflow
Inventor
Yasumi Hikosaka
康己 彦坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57229710A priority Critical patent/JPS59123272A/ja
Publication of JPS59123272A publication Critical patent/JPS59123272A/ja
Publication of JPH0355980B2 publication Critical patent/JPH0355980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57229710A 1982-12-28 1982-12-28 化合物半導体装置 Granted JPS59123272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57229710A JPS59123272A (ja) 1982-12-28 1982-12-28 化合物半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57229710A JPS59123272A (ja) 1982-12-28 1982-12-28 化合物半導体装置

Publications (2)

Publication Number Publication Date
JPS59123272A true JPS59123272A (ja) 1984-07-17
JPH0355980B2 JPH0355980B2 (enrdf_load_stackoverflow) 1991-08-27

Family

ID=16896479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57229710A Granted JPS59123272A (ja) 1982-12-28 1982-12-28 化合物半導体装置

Country Status (1)

Country Link
JP (1) JPS59123272A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293679A (ja) * 1986-06-12 1987-12-21 Fujitsu Ltd 電界効果型半導体装置及びその製造方法
JPS6457680A (en) * 1987-03-18 1989-03-03 Fujitsu Ltd Compound semiconductor integrated circuit device
US4827320A (en) * 1986-09-19 1989-05-02 University Of Illinois Semiconductor device with strained InGaAs layer
JPH01120871A (ja) * 1987-11-05 1989-05-12 Fujitsu Ltd 半導体装置
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
JPH01199475A (ja) * 1988-02-03 1989-08-10 Sanyo Electric Co Ltd ヘテロ接合電界効果トランジスタ
JPH02232942A (ja) * 1989-03-07 1990-09-14 Sony Corp 化合物半導体装置
US4961194A (en) * 1987-03-18 1990-10-02 Fujitsu Limited Compound semiconductor device having nonalloyed ohmic contacts
JPH05198598A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 化合物半導体装置及びその製造方法
JPH06163600A (ja) * 1992-11-26 1994-06-10 Nec Corp 電界効果トランジスタ

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293679A (ja) * 1986-06-12 1987-12-21 Fujitsu Ltd 電界効果型半導体装置及びその製造方法
US4827320A (en) * 1986-09-19 1989-05-02 University Of Illinois Semiconductor device with strained InGaAs layer
JPS6457680A (en) * 1987-03-18 1989-03-03 Fujitsu Ltd Compound semiconductor integrated circuit device
US4961194A (en) * 1987-03-18 1990-10-02 Fujitsu Limited Compound semiconductor device having nonalloyed ohmic contacts
JPH01120871A (ja) * 1987-11-05 1989-05-12 Fujitsu Ltd 半導体装置
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
JPH01199475A (ja) * 1988-02-03 1989-08-10 Sanyo Electric Co Ltd ヘテロ接合電界効果トランジスタ
JPH02232942A (ja) * 1989-03-07 1990-09-14 Sony Corp 化合物半導体装置
JPH05198598A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 化合物半導体装置及びその製造方法
JPH06163600A (ja) * 1992-11-26 1994-06-10 Nec Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0355980B2 (enrdf_load_stackoverflow) 1991-08-27

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