JPS6222461B2 - - Google Patents
Info
- Publication number
- JPS6222461B2 JPS6222461B2 JP5677878A JP5677878A JPS6222461B2 JP S6222461 B2 JPS6222461 B2 JP S6222461B2 JP 5677878 A JP5677878 A JP 5677878A JP 5677878 A JP5677878 A JP 5677878A JP S6222461 B2 JPS6222461 B2 JP S6222461B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- gate
- electrode
- semiconductor active
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 230000005669 field effect Effects 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5677878A JPS54148385A (en) | 1978-05-12 | 1978-05-12 | High-speed switching field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5677878A JPS54148385A (en) | 1978-05-12 | 1978-05-12 | High-speed switching field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54148385A JPS54148385A (en) | 1979-11-20 |
| JPS6222461B2 true JPS6222461B2 (enrdf_load_stackoverflow) | 1987-05-18 |
Family
ID=13036892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5677878A Granted JPS54148385A (en) | 1978-05-12 | 1978-05-12 | High-speed switching field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54148385A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5752174A (en) * | 1980-09-16 | 1982-03-27 | Nec Corp | Multigate field effect transistor |
| JPS6155971A (ja) * | 1984-08-27 | 1986-03-20 | Sumitomo Electric Ind Ltd | シヨツトキ−ゲ−ト電界効果トランジスタ |
| US5220194A (en) * | 1989-11-27 | 1993-06-15 | Motorola, Inc. | Tunable capacitor with RF-DC isolation |
-
1978
- 1978-05-12 JP JP5677878A patent/JPS54148385A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54148385A (en) | 1979-11-20 |
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