JPS59123265A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59123265A
JPS59123265A JP57231419A JP23141982A JPS59123265A JP S59123265 A JPS59123265 A JP S59123265A JP 57231419 A JP57231419 A JP 57231419A JP 23141982 A JP23141982 A JP 23141982A JP S59123265 A JPS59123265 A JP S59123265A
Authority
JP
Japan
Prior art keywords
layer
current
semiconductor
semiconductor layer
current channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57231419A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0131709B2 (OSRAM
Inventor
Toshiaki Ikoma
生駒　俊明
Hajime Maeda
前田　甫
Hisayoshi Yanai
柳井　久義
Makoto Dan
壇　良
Naoyuki Shigyo
直之 執行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57231419A priority Critical patent/JPS59123265A/ja
Priority to DE8383307803T priority patent/DE3370252D1/de
Priority to EP83307803A priority patent/EP0115169B1/en
Publication of JPS59123265A publication Critical patent/JPS59123265A/ja
Priority to US06/850,065 priority patent/US4636824A/en
Publication of JPH0131709B2 publication Critical patent/JPH0131709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57231419A 1982-12-28 1982-12-28 半導体装置 Granted JPS59123265A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57231419A JPS59123265A (ja) 1982-12-28 1982-12-28 半導体装置
DE8383307803T DE3370252D1 (en) 1982-12-28 1983-12-21 Voltage-control type semiconductor switching device
EP83307803A EP0115169B1 (en) 1982-12-28 1983-12-21 Voltage-control type semiconductor switching device
US06/850,065 US4636824A (en) 1982-12-28 1986-04-07 Voltage-controlled type semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57231419A JPS59123265A (ja) 1982-12-28 1982-12-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS59123265A true JPS59123265A (ja) 1984-07-17
JPH0131709B2 JPH0131709B2 (OSRAM) 1989-06-27

Family

ID=16923286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57231419A Granted JPS59123265A (ja) 1982-12-28 1982-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS59123265A (OSRAM)

Also Published As

Publication number Publication date
JPH0131709B2 (OSRAM) 1989-06-27

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