JPH0129074B2 - - Google Patents

Info

Publication number
JPH0129074B2
JPH0129074B2 JP57231420A JP23142082A JPH0129074B2 JP H0129074 B2 JPH0129074 B2 JP H0129074B2 JP 57231420 A JP57231420 A JP 57231420A JP 23142082 A JP23142082 A JP 23142082A JP H0129074 B2 JPH0129074 B2 JP H0129074B2
Authority
JP
Japan
Prior art keywords
layer
carrier storage
storage layer
semiconductor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57231420A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59123257A (ja
Inventor
Toshiaki Ikoma
Hajime Maeda
Hisayoshi Yanai
Makoto Dan
Naoyuki Shigyo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57231420A priority Critical patent/JPS59123257A/ja
Priority to DE8383307803T priority patent/DE3370252D1/de
Priority to EP83307803A priority patent/EP0115169B1/en
Publication of JPS59123257A publication Critical patent/JPS59123257A/ja
Priority to US06/850,065 priority patent/US4636824A/en
Publication of JPH0129074B2 publication Critical patent/JPH0129074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57231420A 1982-12-28 1982-12-28 半導体装置 Granted JPS59123257A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57231420A JPS59123257A (ja) 1982-12-28 1982-12-28 半導体装置
DE8383307803T DE3370252D1 (en) 1982-12-28 1983-12-21 Voltage-control type semiconductor switching device
EP83307803A EP0115169B1 (en) 1982-12-28 1983-12-21 Voltage-control type semiconductor switching device
US06/850,065 US4636824A (en) 1982-12-28 1986-04-07 Voltage-controlled type semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57231420A JPS59123257A (ja) 1982-12-28 1982-12-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS59123257A JPS59123257A (ja) 1984-07-17
JPH0129074B2 true JPH0129074B2 (OSRAM) 1989-06-07

Family

ID=16923301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57231420A Granted JPS59123257A (ja) 1982-12-28 1982-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS59123257A (OSRAM)

Also Published As

Publication number Publication date
JPS59123257A (ja) 1984-07-17

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