JPS59123257A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59123257A
JPS59123257A JP57231420A JP23142082A JPS59123257A JP S59123257 A JPS59123257 A JP S59123257A JP 57231420 A JP57231420 A JP 57231420A JP 23142082 A JP23142082 A JP 23142082A JP S59123257 A JPS59123257 A JP S59123257A
Authority
JP
Japan
Prior art keywords
layer
type
normally
carrier storage
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57231420A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0129074B2 (OSRAM
Inventor
Toshiaki Ikoma
生駒　俊明
Hajime Maeda
前田　甫
Hisayoshi Yanai
柳井　久義
Makoto Dan
檀　良
Naoyuki Shigyo
直之 執行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57231420A priority Critical patent/JPS59123257A/ja
Priority to DE8383307803T priority patent/DE3370252D1/de
Priority to EP83307803A priority patent/EP0115169B1/en
Publication of JPS59123257A publication Critical patent/JPS59123257A/ja
Priority to US06/850,065 priority patent/US4636824A/en
Publication of JPH0129074B2 publication Critical patent/JPH0129074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57231420A 1982-12-28 1982-12-28 半導体装置 Granted JPS59123257A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57231420A JPS59123257A (ja) 1982-12-28 1982-12-28 半導体装置
DE8383307803T DE3370252D1 (en) 1982-12-28 1983-12-21 Voltage-control type semiconductor switching device
EP83307803A EP0115169B1 (en) 1982-12-28 1983-12-21 Voltage-control type semiconductor switching device
US06/850,065 US4636824A (en) 1982-12-28 1986-04-07 Voltage-controlled type semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57231420A JPS59123257A (ja) 1982-12-28 1982-12-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS59123257A true JPS59123257A (ja) 1984-07-17
JPH0129074B2 JPH0129074B2 (OSRAM) 1989-06-07

Family

ID=16923301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57231420A Granted JPS59123257A (ja) 1982-12-28 1982-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS59123257A (OSRAM)

Also Published As

Publication number Publication date
JPH0129074B2 (OSRAM) 1989-06-07

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