JPS59110136A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59110136A
JPS59110136A JP57220947A JP22094782A JPS59110136A JP S59110136 A JPS59110136 A JP S59110136A JP 57220947 A JP57220947 A JP 57220947A JP 22094782 A JP22094782 A JP 22094782A JP S59110136 A JPS59110136 A JP S59110136A
Authority
JP
Japan
Prior art keywords
film
phosphorus
layer
polycrystalline
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57220947A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641935B2 (https=
Inventor
Seiji Ueda
誠二 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP57220947A priority Critical patent/JPS59110136A/ja
Publication of JPS59110136A publication Critical patent/JPS59110136A/ja
Publication of JPS641935B2 publication Critical patent/JPS641935B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57220947A 1982-12-15 1982-12-15 半導体装置の製造方法 Granted JPS59110136A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57220947A JPS59110136A (ja) 1982-12-15 1982-12-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57220947A JPS59110136A (ja) 1982-12-15 1982-12-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59110136A true JPS59110136A (ja) 1984-06-26
JPS641935B2 JPS641935B2 (https=) 1989-01-13

Family

ID=16759040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57220947A Granted JPS59110136A (ja) 1982-12-15 1982-12-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59110136A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251054A (ja) * 1985-04-27 1986-11-08 Pioneer Electronic Corp 半導体装置の製造方法
JPS63217645A (ja) * 1987-03-06 1988-09-09 Nec Corp 多層金属配線を有する半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111772A (en) * 1978-02-22 1979-09-01 Fujitsu Ltd Manufacture for semiconductor device
JPS54156469A (en) * 1978-05-30 1979-12-10 Nec Corp Manufacture for integrated circuit device
JPS5664461A (en) * 1979-09-05 1981-06-01 Texas Instruments Inc Semiconductor device and method of manufacturing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111772A (en) * 1978-02-22 1979-09-01 Fujitsu Ltd Manufacture for semiconductor device
JPS54156469A (en) * 1978-05-30 1979-12-10 Nec Corp Manufacture for integrated circuit device
JPS5664461A (en) * 1979-09-05 1981-06-01 Texas Instruments Inc Semiconductor device and method of manufacturing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251054A (ja) * 1985-04-27 1986-11-08 Pioneer Electronic Corp 半導体装置の製造方法
JPS63217645A (ja) * 1987-03-06 1988-09-09 Nec Corp 多層金属配線を有する半導体装置

Also Published As

Publication number Publication date
JPS641935B2 (https=) 1989-01-13

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