JPS59105366A - Manufacture of metal oxide semiconductor type transistor - Google Patents
Manufacture of metal oxide semiconductor type transistorInfo
- Publication number
- JPS59105366A JPS59105366A JP21399082A JP21399082A JPS59105366A JP S59105366 A JPS59105366 A JP S59105366A JP 21399082 A JP21399082 A JP 21399082A JP 21399082 A JP21399082 A JP 21399082A JP S59105366 A JPS59105366 A JP S59105366A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- source
- oxide film
- metallic silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005755 formation reaction Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21399082A JPS59105366A (en) | 1982-12-08 | 1982-12-08 | Manufacture of metal oxide semiconductor type transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21399082A JPS59105366A (en) | 1982-12-08 | 1982-12-08 | Manufacture of metal oxide semiconductor type transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59105366A true JPS59105366A (en) | 1984-06-18 |
Family
ID=16648424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21399082A Pending JPS59105366A (en) | 1982-12-08 | 1982-12-08 | Manufacture of metal oxide semiconductor type transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59105366A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187322A (en) * | 1984-09-13 | 1986-05-02 | Seiko Epson Corp | Manufacture of semiconductor device |
| US4945070A (en) * | 1989-01-24 | 1990-07-31 | Harris Corporation | Method of making cmos with shallow source and drain junctions |
-
1982
- 1982-12-08 JP JP21399082A patent/JPS59105366A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187322A (en) * | 1984-09-13 | 1986-05-02 | Seiko Epson Corp | Manufacture of semiconductor device |
| US4945070A (en) * | 1989-01-24 | 1990-07-31 | Harris Corporation | Method of making cmos with shallow source and drain junctions |
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