JPS59110136A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59110136A JPS59110136A JP22094782A JP22094782A JPS59110136A JP S59110136 A JPS59110136 A JP S59110136A JP 22094782 A JP22094782 A JP 22094782A JP 22094782 A JP22094782 A JP 22094782A JP S59110136 A JPS59110136 A JP S59110136A
- Authority
- JP
- Japan
- Prior art keywords
- film
- phosphorus
- layer
- polycrystalline
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 23
- 239000011574 phosphorus Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 abstract description 18
- 238000007254 oxidation reaction Methods 0.000 abstract description 18
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 37
- 238000009792 diffusion process Methods 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22094782A JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22094782A JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110136A true JPS59110136A (ja) | 1984-06-26 |
| JPS641935B2 JPS641935B2 (enrdf_load_stackoverflow) | 1989-01-13 |
Family
ID=16759040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22094782A Granted JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110136A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251054A (ja) * | 1985-04-27 | 1986-11-08 | Pioneer Electronic Corp | 半導体装置の製造方法 |
| JPS63217645A (ja) * | 1987-03-06 | 1988-09-09 | Nec Corp | 多層金属配線を有する半導体装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111772A (en) * | 1978-02-22 | 1979-09-01 | Fujitsu Ltd | Manufacture for semiconductor device |
| JPS54156469A (en) * | 1978-05-30 | 1979-12-10 | Nec Corp | Manufacture for integrated circuit device |
| JPS5664461A (en) * | 1979-09-05 | 1981-06-01 | Texas Instruments Inc | Semiconductor device and method of manufacturing same |
-
1982
- 1982-12-15 JP JP22094782A patent/JPS59110136A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111772A (en) * | 1978-02-22 | 1979-09-01 | Fujitsu Ltd | Manufacture for semiconductor device |
| JPS54156469A (en) * | 1978-05-30 | 1979-12-10 | Nec Corp | Manufacture for integrated circuit device |
| JPS5664461A (en) * | 1979-09-05 | 1981-06-01 | Texas Instruments Inc | Semiconductor device and method of manufacturing same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251054A (ja) * | 1985-04-27 | 1986-11-08 | Pioneer Electronic Corp | 半導体装置の製造方法 |
| JPS63217645A (ja) * | 1987-03-06 | 1988-09-09 | Nec Corp | 多層金属配線を有する半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS641935B2 (enrdf_load_stackoverflow) | 1989-01-13 |
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