JPS6230494B2 - - Google Patents
Info
- Publication number
- JPS6230494B2 JPS6230494B2 JP11502379A JP11502379A JPS6230494B2 JP S6230494 B2 JPS6230494 B2 JP S6230494B2 JP 11502379 A JP11502379 A JP 11502379A JP 11502379 A JP11502379 A JP 11502379A JP S6230494 B2 JPS6230494 B2 JP S6230494B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- contact hole
- film
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 18
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- 239000012808 vapor phase Substances 0.000 description 6
- 238000001947 vapour-phase growth Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11502379A JPS5638842A (en) | 1979-09-07 | 1979-09-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11502379A JPS5638842A (en) | 1979-09-07 | 1979-09-07 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5638842A JPS5638842A (en) | 1981-04-14 |
JPS6230494B2 true JPS6230494B2 (enrdf_load_stackoverflow) | 1987-07-02 |
Family
ID=14652313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11502379A Granted JPS5638842A (en) | 1979-09-07 | 1979-09-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5638842A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08312625A (ja) * | 1995-05-19 | 1996-11-26 | Takashi Nakao | ナット装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58147046A (ja) * | 1982-02-25 | 1983-09-01 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
JPH0626235B2 (ja) * | 1984-06-20 | 1994-04-06 | 株式会社日立製作所 | 半導体集積回路装置 |
JP2512900B2 (ja) * | 1986-05-22 | 1996-07-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
1979
- 1979-09-07 JP JP11502379A patent/JPS5638842A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08312625A (ja) * | 1995-05-19 | 1996-11-26 | Takashi Nakao | ナット装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5638842A (en) | 1981-04-14 |
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