JPS5638842A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5638842A JPS5638842A JP11502379A JP11502379A JPS5638842A JP S5638842 A JPS5638842 A JP S5638842A JP 11502379 A JP11502379 A JP 11502379A JP 11502379 A JP11502379 A JP 11502379A JP S5638842 A JPS5638842 A JP S5638842A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon film
- oxidated
- insulating film
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11502379A JPS5638842A (en) | 1979-09-07 | 1979-09-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11502379A JPS5638842A (en) | 1979-09-07 | 1979-09-07 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5638842A true JPS5638842A (en) | 1981-04-14 |
JPS6230494B2 JPS6230494B2 (enrdf_load_stackoverflow) | 1987-07-02 |
Family
ID=14652313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11502379A Granted JPS5638842A (en) | 1979-09-07 | 1979-09-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5638842A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58147046A (ja) * | 1982-02-25 | 1983-09-01 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
JPS6187353A (ja) * | 1984-06-20 | 1986-05-02 | Hitachi Ltd | 半導体集積回路装置 |
JPS62274641A (ja) * | 1986-05-22 | 1987-11-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08312625A (ja) * | 1995-05-19 | 1996-11-26 | Takashi Nakao | ナット装置 |
-
1979
- 1979-09-07 JP JP11502379A patent/JPS5638842A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58147046A (ja) * | 1982-02-25 | 1983-09-01 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
JPS6187353A (ja) * | 1984-06-20 | 1986-05-02 | Hitachi Ltd | 半導体集積回路装置 |
JPS62274641A (ja) * | 1986-05-22 | 1987-11-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6230494B2 (enrdf_load_stackoverflow) | 1987-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0067206A4 (en) | Method for fabricating complementary semiconductor devices. | |
US4271422A (en) | CMOS SOS With narrow ring shaped P silicon gate common to both devices | |
US4997777A (en) | Manufacturing process for an integrated circuit comprising double gate components | |
JPS55153377A (en) | Production of semiconductor device | |
JPS5638842A (en) | Manufacture of semiconductor device | |
JPS5650535A (en) | Manufacture of semiconductor device | |
JPS5745947A (en) | Mos type semiconductor integrated circuit | |
JPS5730358A (en) | Manufacture of semiconductor device | |
JPS5455388A (en) | Production of mos type semiconductor device | |
JP2817226B2 (ja) | 半導体装置の製造方法 | |
JPS63128626A (ja) | 半導体集積回路装置のコンタクト形成方法 | |
JPS5773974A (en) | Manufacture of most type semiconductor device | |
JPS57118662A (en) | Manufacture of semiconductor device | |
JPS5461490A (en) | Multi-layer wiring forming method in semiconductor device | |
JPS5613735A (en) | Manufacture of semiconductor device | |
JPS5447489A (en) | Production of mos semiconductor device | |
JPS577153A (en) | Preparation of semiconductor device | |
KR950021107A (ko) | 콘택홀 형성방법 | |
JPS568849A (en) | Manufacture of semiconductor integrated circuit | |
JPS55157265A (en) | Manufacturing mthod for mos field-effect transistor | |
KR100192474B1 (ko) | 모스 트랜지스터 제조방법 | |
JPS57106150A (en) | Manufacture of semiconductor device | |
KR950021765A (ko) | 반도체 소자의 트랜지스터 형성방법 | |
KR950004548A (ko) | 반도체소자 제조방법 | |
JPS56153760A (en) | Semiconductor integrated circuit device |