JPS5638842A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5638842A
JPS5638842A JP11502379A JP11502379A JPS5638842A JP S5638842 A JPS5638842 A JP S5638842A JP 11502379 A JP11502379 A JP 11502379A JP 11502379 A JP11502379 A JP 11502379A JP S5638842 A JPS5638842 A JP S5638842A
Authority
JP
Japan
Prior art keywords
film
silicon film
oxidated
insulating film
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11502379A
Other languages
Japanese (ja)
Other versions
JPS6230494B2 (en
Inventor
Haruo Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11502379A priority Critical patent/JPS5638842A/en
Publication of JPS5638842A publication Critical patent/JPS5638842A/en
Publication of JPS6230494B2 publication Critical patent/JPS6230494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent the disconnection of an Al wiring layer and to form an insulating film having excellent water proof and dielectric breakdown property by a method wherein two layers of insulating film of a nitrided silicon film and an oxidated silicon film on the first insulating film forming contact holes. CONSTITUTION:Field oxidation films 2a, 2b are formed on a silicon substrate 1, a gate oxidation film 3, a crystalline gate electrode 4, source drain regions 6, 7 and the oxidated film are formed. Next thereto, a phosphorus glass layer 9 is formed to make a contact hole. Then a contact hole is made after the forming of a nitrided silicon film 120 and an oxidated silicon film 113 is formed thereupon. At this time, the lower nitrided silicon film 120 operates as a stopper of the etching, the phosphorus film 9 is not etched even though there is a mask slippage after contact holes have been formed, the Al wiring layer 117 to 119 are formed to complete the MOS semiconductor device.
JP11502379A 1979-09-07 1979-09-07 Manufacture of semiconductor device Granted JPS5638842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11502379A JPS5638842A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11502379A JPS5638842A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5638842A true JPS5638842A (en) 1981-04-14
JPS6230494B2 JPS6230494B2 (en) 1987-07-02

Family

ID=14652313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11502379A Granted JPS5638842A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638842A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147046A (en) * 1982-02-25 1983-09-01 Nippon Denso Co Ltd Semiconductor device
JPS6187353A (en) * 1984-06-20 1986-05-02 Hitachi Ltd Semiconductor integrated circuit device
JPS62274641A (en) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08312625A (en) * 1995-05-19 1996-11-26 Takashi Nakao Nut device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147046A (en) * 1982-02-25 1983-09-01 Nippon Denso Co Ltd Semiconductor device
JPH0210577B2 (en) * 1982-02-25 1990-03-08 Nippon Denso Co
JPS6187353A (en) * 1984-06-20 1986-05-02 Hitachi Ltd Semiconductor integrated circuit device
JPS62274641A (en) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6230494B2 (en) 1987-07-02

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