JPS59106133A - 集積回路装置 - Google Patents

集積回路装置

Info

Publication number
JPS59106133A
JPS59106133A JP57216508A JP21650882A JPS59106133A JP S59106133 A JPS59106133 A JP S59106133A JP 57216508 A JP57216508 A JP 57216508A JP 21650882 A JP21650882 A JP 21650882A JP S59106133 A JPS59106133 A JP S59106133A
Authority
JP
Japan
Prior art keywords
nitride film
silicon
groove
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57216508A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325708B2 (enExample
Inventor
Koji Yamazaki
孝二 山崎
Kuniyuki Hamano
浜野　邦幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57216508A priority Critical patent/JPS59106133A/ja
Publication of JPS59106133A publication Critical patent/JPS59106133A/ja
Publication of JPS6325708B2 publication Critical patent/JPS6325708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/014—
    • H10W10/17—

Landscapes

  • Element Separation (AREA)
JP57216508A 1982-12-09 1982-12-09 集積回路装置 Granted JPS59106133A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57216508A JPS59106133A (ja) 1982-12-09 1982-12-09 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57216508A JPS59106133A (ja) 1982-12-09 1982-12-09 集積回路装置

Publications (2)

Publication Number Publication Date
JPS59106133A true JPS59106133A (ja) 1984-06-19
JPS6325708B2 JPS6325708B2 (enExample) 1988-05-26

Family

ID=16689521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57216508A Granted JPS59106133A (ja) 1982-12-09 1982-12-09 集積回路装置

Country Status (1)

Country Link
JP (1) JPS59106133A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618945A (ja) * 1984-06-25 1986-01-16 Nec Corp 半導体集積回路装置
JPS6190442A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置及びその製造方法
JPS61232631A (ja) * 1985-04-09 1986-10-16 Nec Corp 半導体装置
JPS6249643A (ja) * 1985-04-19 1987-03-04 Nec Corp 半導体装置およびその製造方法
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
US5148257A (en) * 1989-12-20 1992-09-15 Nec Corporation Semiconductor device having u-groove
US5229317A (en) * 1991-09-13 1993-07-20 Nec Corporation Method for preventing out-diffusion of phosphorous and boron in a bpsg-buried trench

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160050A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5712533A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor device
JPS57113248A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Manufacture of semiconductor device
JPS57180146A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Formation of elements isolation region

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160050A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5712533A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor device
JPS57113248A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Manufacture of semiconductor device
JPS57180146A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Formation of elements isolation region

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618945A (ja) * 1984-06-25 1986-01-16 Nec Corp 半導体集積回路装置
JPS6190442A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置及びその製造方法
JPS61232631A (ja) * 1985-04-09 1986-10-16 Nec Corp 半導体装置
JPS6249643A (ja) * 1985-04-19 1987-03-04 Nec Corp 半導体装置およびその製造方法
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
US5148257A (en) * 1989-12-20 1992-09-15 Nec Corporation Semiconductor device having u-groove
US5229317A (en) * 1991-09-13 1993-07-20 Nec Corporation Method for preventing out-diffusion of phosphorous and boron in a bpsg-buried trench

Also Published As

Publication number Publication date
JPS6325708B2 (enExample) 1988-05-26

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