JPS5910589B2 - モノリシック集積ｉ↑２ｌ回路のプレ−ナ拡散方法 - Google Patents
モノリシック集積ｉ↑２ｌ回路のプレ−ナ拡散方法Info
- Publication number
- JPS5910589B2 JPS5910589B2 JP50133636A JP13363675A JPS5910589B2 JP S5910589 B2 JPS5910589 B2 JP S5910589B2 JP 50133636 A JP50133636 A JP 50133636A JP 13363675 A JP13363675 A JP 13363675A JP S5910589 B2 JPS5910589 B2 JP S5910589B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- diffusion
- openings
- region
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 title claims description 55
- 239000000463 material Substances 0.000 claims description 36
- 230000000873 masking effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 47
- 238000002513 implantation Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/658—Integrated injection logic integrated in combination with analog structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/087—I2L integrated injection logic
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2453134A DE2453134C3 (de) | 1974-11-08 | 1974-11-08 | Planardiffusionsverfahren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5169987A JPS5169987A (en, 2012) | 1976-06-17 |
| JPS5910589B2 true JPS5910589B2 (ja) | 1984-03-09 |
Family
ID=5930397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50133636A Expired JPS5910589B2 (ja) | 1974-11-08 | 1975-11-08 | モノリシック集積ｉ↑２ｌ回路のプレ−ナ拡散方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4043849A (en, 2012) |
| JP (1) | JPS5910589B2 (en, 2012) |
| CH (1) | CH596668A5 (en, 2012) |
| DE (1) | DE2453134C3 (en, 2012) |
| FR (1) | FR2290758A1 (en, 2012) |
| GB (1) | GB1486099A (en, 2012) |
| IT (1) | IT1048824B (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166793U (en, 2012) * | 1987-04-17 | 1988-10-31 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2532608C2 (de) * | 1975-07-22 | 1982-09-02 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung |
| JPS5338276A (en) * | 1976-09-20 | 1978-04-08 | Toshiba Corp | Semiconductor device |
| DE2710878A1 (de) * | 1977-03-12 | 1978-09-14 | Itt Ind Gmbh Deutsche | Verfahren zum herstellen einer an der oberflaeche eines halbleiterkoerpers aus silicium liegenden zone einer monolithisch integrierten i hoch 2 l-schaltung |
| DE2711657C2 (de) * | 1977-03-17 | 1983-08-25 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren mit mindestens zwei aufeinanderfolgenden Diffusionsprozessen |
| DE2715158A1 (de) * | 1977-04-05 | 1978-10-19 | Licentia Gmbh | Verfahren zur herstellung mindestens einer mit mindestens einer i hoch 2 l-schaltung integrierten analogschaltung |
| US4400689A (en) * | 1977-04-07 | 1983-08-23 | Analog Devices, Incorporated | A-to-D Converter of the successive-approximation type |
| US4144098A (en) * | 1977-04-28 | 1979-03-13 | Hughes Aircraft Company | P+ Buried layer for I2 L isolation by ion implantation |
| US4149906A (en) * | 1977-04-29 | 1979-04-17 | International Business Machines Corporation | Process for fabrication of merged transistor logic (MTL) cells |
| US4157268A (en) * | 1977-06-16 | 1979-06-05 | International Business Machines Corporation | Localized oxidation enhancement for an integrated injection logic circuit |
| JPS54113276A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Rpoduction of semiconductor device |
| DE2835330C3 (de) * | 1978-08-11 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung |
| JPS5555559A (en) * | 1978-10-19 | 1980-04-23 | Toshiba Corp | Method of fabricating semiconductor device |
| DE2855768C3 (de) * | 1978-12-22 | 1981-10-15 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Schaltung |
| US4272307A (en) * | 1979-03-12 | 1981-06-09 | Sprague Electric Company | Integrated circuit with I2 L and power transistors and method for making |
| DE3020609C2 (de) * | 1979-05-31 | 1985-11-07 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element |
| JPS5739567A (en) * | 1980-07-18 | 1982-03-04 | Nec Corp | Manufacture of semiconductor device |
| SE514707C2 (sv) * | 1998-11-04 | 2001-04-02 | Ericsson Telefon Ab L M | Metod för halvledartillverkning |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL135875C (en, 2012) * | 1958-06-09 | 1900-01-01 | ||
| US3551221A (en) * | 1967-11-29 | 1970-12-29 | Nippon Electric Co | Method of manufacturing a semiconductor integrated circuit |
| FR1569872A (en, 2012) * | 1968-04-10 | 1969-06-06 | ||
| US3655457A (en) * | 1968-08-06 | 1972-04-11 | Ibm | Method of making or modifying a pn-junction by ion implantation |
| US3566218A (en) * | 1968-10-02 | 1971-02-23 | Nat Semiconductor Corp The | Multiple base width integrated circuit |
| US3560278A (en) * | 1968-11-29 | 1971-02-02 | Motorola Inc | Alignment process for fabricating semiconductor devices |
| US3806382A (en) * | 1972-04-06 | 1974-04-23 | Ibm | Vapor-solid impurity diffusion process |
| JPS5548704B2 (en, 2012) * | 1973-06-01 | 1980-12-08 | ||
| US3928081A (en) * | 1973-10-26 | 1975-12-23 | Signetics Corp | Method for fabricating semiconductor devices using composite mask and ion implantation |
| US3898107A (en) * | 1973-12-03 | 1975-08-05 | Rca Corp | Method of making a junction-isolated semiconductor integrated circuit device |
| US3933528A (en) * | 1974-07-02 | 1976-01-20 | Texas Instruments Incorporated | Process for fabricating integrated circuits utilizing ion implantation |
-
1974
- 1974-11-08 DE DE2453134A patent/DE2453134C3/de not_active Expired
-
1975
- 1975-10-23 US US05/625,339 patent/US4043849A/en not_active Expired - Lifetime
- 1975-10-31 GB GB45110/75A patent/GB1486099A/en not_active Expired
- 1975-11-05 IT IT28989/75A patent/IT1048824B/it active
- 1975-11-07 CH CH1441575A patent/CH596668A5/xx not_active IP Right Cessation
- 1975-11-07 FR FR7534066A patent/FR2290758A1/fr active Granted
- 1975-11-08 JP JP50133636A patent/JPS5910589B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166793U (en, 2012) * | 1987-04-17 | 1988-10-31 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2453134C3 (de) | 1983-02-10 |
| US4043849A (en) | 1977-08-23 |
| CH596668A5 (en, 2012) | 1978-03-15 |
| FR2290758B1 (en, 2012) | 1981-09-04 |
| JPS5169987A (en, 2012) | 1976-06-17 |
| DE2453134B2 (de) | 1976-11-04 |
| FR2290758A1 (fr) | 1976-06-04 |
| IT1048824B (it) | 1980-12-20 |
| DE2453134A1 (de) | 1976-05-13 |
| GB1486099A (en) | 1977-09-14 |
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