JPS6220711B2 - - Google Patents

Info

Publication number
JPS6220711B2
JPS6220711B2 JP54167327A JP16732779A JPS6220711B2 JP S6220711 B2 JPS6220711 B2 JP S6220711B2 JP 54167327 A JP54167327 A JP 54167327A JP 16732779 A JP16732779 A JP 16732779A JP S6220711 B2 JPS6220711 B2 JP S6220711B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
insulating film
film
platinum
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54167327A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5690561A (en
Inventor
Akira Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16732779A priority Critical patent/JPS5690561A/ja
Publication of JPS5690561A publication Critical patent/JPS5690561A/ja
Publication of JPS6220711B2 publication Critical patent/JPS6220711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP16732779A 1979-12-22 1979-12-22 Manufacture of semiconductor device Granted JPS5690561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16732779A JPS5690561A (en) 1979-12-22 1979-12-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16732779A JPS5690561A (en) 1979-12-22 1979-12-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5690561A JPS5690561A (en) 1981-07-22
JPS6220711B2 true JPS6220711B2 (en, 2012) 1987-05-08

Family

ID=15847684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16732779A Granted JPS5690561A (en) 1979-12-22 1979-12-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5690561A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666822U (ja) * 1993-03-01 1994-09-20 トヨタ車体株式会社 ダイクッションピンの圧力制御装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169971A (ja) * 1982-03-30 1983-10-06 Fujitsu Ltd 半導体装置およびその製造方法
JPS5961179A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd バイポ−ラ半導体装置の製造方法
GB2172744B (en) * 1985-03-23 1989-07-19 Stc Plc Semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123083A (en) * 1977-04-01 1978-10-27 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666822U (ja) * 1993-03-01 1994-09-20 トヨタ車体株式会社 ダイクッションピンの圧力制御装置

Also Published As

Publication number Publication date
JPS5690561A (en) 1981-07-22

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