JPS5690561A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5690561A JPS5690561A JP16732779A JP16732779A JPS5690561A JP S5690561 A JPS5690561 A JP S5690561A JP 16732779 A JP16732779 A JP 16732779A JP 16732779 A JP16732779 A JP 16732779A JP S5690561 A JPS5690561 A JP S5690561A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- type
- layer
- base
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16732779A JPS5690561A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16732779A JPS5690561A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5690561A true JPS5690561A (en) | 1981-07-22 |
| JPS6220711B2 JPS6220711B2 (ja) | 1987-05-08 |
Family
ID=15847684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16732779A Granted JPS5690561A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5690561A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58169971A (ja) * | 1982-03-30 | 1983-10-06 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JPS5961179A (ja) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | バイポ−ラ半導体装置の製造方法 |
| EP0199061A2 (en) * | 1985-03-23 | 1986-10-29 | Itt Industries, Inc. | Semiconductor devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0666822U (ja) * | 1993-03-01 | 1994-09-20 | トヨタ車体株式会社 | ダイクッションピンの圧力制御装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53123083A (en) * | 1977-04-01 | 1978-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor device |
-
1979
- 1979-12-22 JP JP16732779A patent/JPS5690561A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53123083A (en) * | 1977-04-01 | 1978-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58169971A (ja) * | 1982-03-30 | 1983-10-06 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JPH0247853B2 (ja) * | 1982-03-30 | 1990-10-23 | Fujitsu Ltd | |
| JPS5961179A (ja) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | バイポ−ラ半導体装置の製造方法 |
| EP0199061A2 (en) * | 1985-03-23 | 1986-10-29 | Itt Industries, Inc. | Semiconductor devices |
| EP0202727A2 (en) * | 1985-03-23 | 1986-11-26 | Northern Telecom Europe Limited | Semiconductor devices |
| EP0199061A3 (en) * | 1985-03-23 | 1988-03-30 | Itt Industries, Inc. | Semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6220711B2 (ja) | 1987-05-08 |
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