JPS5897868A - 多結晶薄膜トランジスタ - Google Patents

多結晶薄膜トランジスタ

Info

Publication number
JPS5897868A
JPS5897868A JP56197224A JP19722481A JPS5897868A JP S5897868 A JPS5897868 A JP S5897868A JP 56197224 A JP56197224 A JP 56197224A JP 19722481 A JP19722481 A JP 19722481A JP S5897868 A JPS5897868 A JP S5897868A
Authority
JP
Japan
Prior art keywords
polycrystalline
layer
transistor
region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56197224A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0447465B2 (enExample
Inventor
Seishiro Yoshioka
吉岡　征四郎
Takao Yonehara
隆夫 米原
Yoshio Sakuma
佐久間　純郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56197224A priority Critical patent/JPS5897868A/ja
Publication of JPS5897868A publication Critical patent/JPS5897868A/ja
Publication of JPH0447465B2 publication Critical patent/JPH0447465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP56197224A 1981-12-08 1981-12-08 多結晶薄膜トランジスタ Granted JPS5897868A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56197224A JPS5897868A (ja) 1981-12-08 1981-12-08 多結晶薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56197224A JPS5897868A (ja) 1981-12-08 1981-12-08 多結晶薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS5897868A true JPS5897868A (ja) 1983-06-10
JPH0447465B2 JPH0447465B2 (enExample) 1992-08-04

Family

ID=16370897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56197224A Granted JPS5897868A (ja) 1981-12-08 1981-12-08 多結晶薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS5897868A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076170A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置作製方法
JPS6076168A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置作製方法
JPS6076169A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置
JPS6076167A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076170A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置作製方法
JPS6076168A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置作製方法
JPS6076169A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置
JPS6076167A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置

Also Published As

Publication number Publication date
JPH0447465B2 (enExample) 1992-08-04

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