JPS5893345A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5893345A JPS5893345A JP19254481A JP19254481A JPS5893345A JP S5893345 A JPS5893345 A JP S5893345A JP 19254481 A JP19254481 A JP 19254481A JP 19254481 A JP19254481 A JP 19254481A JP S5893345 A JPS5893345 A JP S5893345A
- Authority
- JP
- Japan
- Prior art keywords
- piece
- pieces
- layer
- single crystal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 14
- 239000002023 wood Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 abstract description 19
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 14
- 229910052596 spinel Inorganic materials 0.000 abstract description 11
- 239000011029 spinel Substances 0.000 abstract description 11
- 229910000679 solder Inorganic materials 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 8
- 150000002739 metals Chemical class 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 241000345998 Calamus manan Species 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 235000012950 rattan cane Nutrition 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 235000010575 Pueraria lobata Nutrition 0.000 description 1
- 241000219781 Pueraria montana var. lobata Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001152 differential interference contrast microscopy Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- LLPOLZWFYMWNKH-CMKMFDCUSA-N hydrocodone Chemical compound C([C@H]1[C@H](N(CC[C@@]112)C)C3)CC(=O)[C@@H]1OC1=C2C3=CC=C1OC LLPOLZWFYMWNKH-CMKMFDCUSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 235000012245 magnesium oxide Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical class [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19254481A JPS5893345A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19254481A JPS5893345A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893345A true JPS5893345A (ja) | 1983-06-03 |
| JPH0341984B2 JPH0341984B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-06-25 |
Family
ID=16293038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19254481A Granted JPS5893345A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5948950A (ja) * | 1982-09-13 | 1984-03-21 | Agency Of Ind Science & Technol | 三次元集積回路構造体の製造方法 |
| JPS6052047A (ja) * | 1983-06-27 | 1985-03-23 | テレタイプ コ−ポレ−シヨン | 集積回路デバイスの製作方法 |
| JPS6052046A (ja) * | 1983-06-27 | 1985-03-23 | テレタイプ コ−ポレ−シヨン | 集積回路デバイスの製作方法 |
| JPS6052048A (ja) * | 1983-06-27 | 1985-03-23 | テレタイプ コ−ポレ−シヨン | 集積回路デバイスの製作方法 |
| JPS62272556A (ja) * | 1986-05-20 | 1987-11-26 | Fujitsu Ltd | 三次元半導体集積回路装置及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423484A (en) * | 1977-07-25 | 1979-02-22 | Hitachi Ltd | Semiconductor integrated circuit and its manufacture |
-
1981
- 1981-11-30 JP JP19254481A patent/JPS5893345A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423484A (en) * | 1977-07-25 | 1979-02-22 | Hitachi Ltd | Semiconductor integrated circuit and its manufacture |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5948950A (ja) * | 1982-09-13 | 1984-03-21 | Agency Of Ind Science & Technol | 三次元集積回路構造体の製造方法 |
| JPS6052047A (ja) * | 1983-06-27 | 1985-03-23 | テレタイプ コ−ポレ−シヨン | 集積回路デバイスの製作方法 |
| JPS6052046A (ja) * | 1983-06-27 | 1985-03-23 | テレタイプ コ−ポレ−シヨン | 集積回路デバイスの製作方法 |
| JPS6052048A (ja) * | 1983-06-27 | 1985-03-23 | テレタイプ コ−ポレ−シヨン | 集積回路デバイスの製作方法 |
| JPS62272556A (ja) * | 1986-05-20 | 1987-11-26 | Fujitsu Ltd | 三次元半導体集積回路装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0341984B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-06-25 |
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