JPS5893255A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5893255A
JPS5893255A JP19060881A JP19060881A JPS5893255A JP S5893255 A JPS5893255 A JP S5893255A JP 19060881 A JP19060881 A JP 19060881A JP 19060881 A JP19060881 A JP 19060881A JP S5893255 A JPS5893255 A JP S5893255A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
melting point
manufacturing
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19060881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0332215B2 (enrdf_load_html_response
Inventor
Mitsunao Chiba
千葉　光直
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP19060881A priority Critical patent/JPS5893255A/ja
Publication of JPS5893255A publication Critical patent/JPS5893255A/ja
Publication of JPH0332215B2 publication Critical patent/JPH0332215B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP19060881A 1981-11-30 1981-11-30 半導体装置の製造方法 Granted JPS5893255A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19060881A JPS5893255A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19060881A JPS5893255A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5893255A true JPS5893255A (ja) 1983-06-02
JPH0332215B2 JPH0332215B2 (enrdf_load_html_response) 1991-05-10

Family

ID=16260894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19060881A Granted JPS5893255A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5893255A (enrdf_load_html_response)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180819A (ja) * 1984-09-27 1986-04-24 Nec Kansai Ltd 半導体装置の製造方法
JPS61150270A (ja) * 1984-12-24 1986-07-08 Nec Corp 半導体集積回路装置及びその製造方法
JPS61168256A (ja) * 1985-01-21 1986-07-29 Sony Corp 半導体装置及びその製造方法
JPS61216447A (ja) * 1985-03-22 1986-09-26 Fujitsu Ltd 半導体装置の製造方法
JPS6235649A (ja) * 1985-08-09 1987-02-16 Fujitsu Ltd 配線層の形成方法
JPS6286818A (ja) * 1985-10-14 1987-04-21 Fujitsu Ltd 半導体装置の製造方法
JPS62111448A (ja) * 1985-11-08 1987-05-22 Fujitsu Ltd スル−ホ−ルの形成方法
JPS62179745A (ja) * 1986-02-04 1987-08-06 Nec Corp 半導体装置の製造方法
JPS62204523A (ja) * 1986-03-04 1987-09-09 Nec Corp コンタクト電極の形成方法
JPS62206853A (ja) * 1986-03-07 1987-09-11 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS63260051A (ja) * 1987-04-16 1988-10-27 Nec Corp 半導体装置
JPS63269546A (ja) * 1987-04-27 1988-11-07 Nec Corp 半導体装置の製造方法
JPH02185024A (ja) * 1989-01-11 1990-07-19 Rohm Co Ltd 半導体装置の製造方法
US4985371A (en) * 1988-12-09 1991-01-15 At&T Bell Laboratories Process for making integrated-circuit device metallization
JPH0684911A (ja) * 1992-01-23 1994-03-25 Samsung Electron Co Ltd 半導体装置およびその製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180819A (ja) * 1984-09-27 1986-04-24 Nec Kansai Ltd 半導体装置の製造方法
JPS61150270A (ja) * 1984-12-24 1986-07-08 Nec Corp 半導体集積回路装置及びその製造方法
JPS61168256A (ja) * 1985-01-21 1986-07-29 Sony Corp 半導体装置及びその製造方法
JPS61216447A (ja) * 1985-03-22 1986-09-26 Fujitsu Ltd 半導体装置の製造方法
JPS6235649A (ja) * 1985-08-09 1987-02-16 Fujitsu Ltd 配線層の形成方法
JPS6286818A (ja) * 1985-10-14 1987-04-21 Fujitsu Ltd 半導体装置の製造方法
JPS62111448A (ja) * 1985-11-08 1987-05-22 Fujitsu Ltd スル−ホ−ルの形成方法
JPS62179745A (ja) * 1986-02-04 1987-08-06 Nec Corp 半導体装置の製造方法
JPS62204523A (ja) * 1986-03-04 1987-09-09 Nec Corp コンタクト電極の形成方法
JPS62206853A (ja) * 1986-03-07 1987-09-11 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS63260051A (ja) * 1987-04-16 1988-10-27 Nec Corp 半導体装置
JPS63269546A (ja) * 1987-04-27 1988-11-07 Nec Corp 半導体装置の製造方法
US4985371A (en) * 1988-12-09 1991-01-15 At&T Bell Laboratories Process for making integrated-circuit device metallization
JPH02185024A (ja) * 1989-01-11 1990-07-19 Rohm Co Ltd 半導体装置の製造方法
JPH0684911A (ja) * 1992-01-23 1994-03-25 Samsung Electron Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0332215B2 (enrdf_load_html_response) 1991-05-10

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