JPS5835973A - 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ - Google Patents

埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Info

Publication number
JPS5835973A
JPS5835973A JP56135142A JP13514281A JPS5835973A JP S5835973 A JPS5835973 A JP S5835973A JP 56135142 A JP56135142 A JP 56135142A JP 13514281 A JP13514281 A JP 13514281A JP S5835973 A JPS5835973 A JP S5835973A
Authority
JP
Japan
Prior art keywords
gate
layer
buried
thyristor
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56135142A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6364908B2 (enrdf_load_stackoverflow
Inventor
Yasuhide Hayashi
林　泰英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP56135142A priority Critical patent/JPS5835973A/ja
Publication of JPS5835973A publication Critical patent/JPS5835973A/ja
Publication of JPS6364908B2 publication Critical patent/JPS6364908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP56135142A 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ Granted JPS5835973A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56135142A JPS5835973A (ja) 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56135142A JPS5835973A (ja) 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS5835973A true JPS5835973A (ja) 1983-03-02
JPS6364908B2 JPS6364908B2 (enrdf_load_stackoverflow) 1988-12-14

Family

ID=15144781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56135142A Granted JPS5835973A (ja) 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Country Status (1)

Country Link
JP (1) JPS5835973A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152063A (ja) * 1984-01-20 1985-08-10 Toyo Electric Mfg Co Ltd 静電誘導サイリスタ
US4651188A (en) * 1984-05-29 1987-03-17 Kabushiki Kaisha Meidensha Semiconductor device with specifically oriented control layer
US5591991A (en) * 1993-07-28 1997-01-07 Ngk Insulators, Ltd. Semiconductor device and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5552249B2 (ja) * 2009-03-27 2014-07-16 新電元工業株式会社 ３端子サイリスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117680A (en) * 1974-08-05 1976-02-12 Hitachi Ltd Geeto taan ofu sairisuta
JPS5428579A (en) * 1977-08-05 1979-03-03 Hitachi Ltd Field effect switching element
JPS54131886A (en) * 1978-04-04 1979-10-13 Meidensha Electric Mfg Co Ltd High-speed switching thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117680A (en) * 1974-08-05 1976-02-12 Hitachi Ltd Geeto taan ofu sairisuta
JPS5428579A (en) * 1977-08-05 1979-03-03 Hitachi Ltd Field effect switching element
JPS54131886A (en) * 1978-04-04 1979-10-13 Meidensha Electric Mfg Co Ltd High-speed switching thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152063A (ja) * 1984-01-20 1985-08-10 Toyo Electric Mfg Co Ltd 静電誘導サイリスタ
US4651188A (en) * 1984-05-29 1987-03-17 Kabushiki Kaisha Meidensha Semiconductor device with specifically oriented control layer
US5591991A (en) * 1993-07-28 1997-01-07 Ngk Insulators, Ltd. Semiconductor device and method of manufacturing the same
US5739044A (en) * 1993-07-28 1998-04-14 Ngk Insulators, Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6364908B2 (enrdf_load_stackoverflow) 1988-12-14

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