JPS625346B2 - - Google Patents
Info
- Publication number
- JPS625346B2 JPS625346B2 JP55016152A JP1615280A JPS625346B2 JP S625346 B2 JPS625346 B2 JP S625346B2 JP 55016152 A JP55016152 A JP 55016152A JP 1615280 A JP1615280 A JP 1615280A JP S625346 B2 JPS625346 B2 JP S625346B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- type semiconductor
- transistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 103
- 239000012535 impurity Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 description 14
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1615280A JPS56112751A (en) | 1980-02-13 | 1980-02-13 | Switching element |
| GB8103251A GB2069787B (en) | 1980-02-13 | 1981-02-03 | Semiconductor switching device |
| CA000370458A CA1154172A (en) | 1980-02-13 | 1981-02-10 | Semiconductor switching device |
| DE3104743A DE3104743C2 (de) | 1980-02-13 | 1981-02-11 | Halbleiter-Schaltanordnung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1615280A JPS56112751A (en) | 1980-02-13 | 1980-02-13 | Switching element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56112751A JPS56112751A (en) | 1981-09-05 |
| JPS625346B2 true JPS625346B2 (enrdf_load_stackoverflow) | 1987-02-04 |
Family
ID=11908523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1615280A Granted JPS56112751A (en) | 1980-02-13 | 1980-02-13 | Switching element |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS56112751A (enrdf_load_stackoverflow) |
| CA (1) | CA1154172A (enrdf_load_stackoverflow) |
| DE (1) | DE3104743C2 (enrdf_load_stackoverflow) |
| GB (1) | GB2069787B (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126959A (en) * | 1980-03-12 | 1981-10-05 | Nec Corp | Semiconductor device |
| JPS62198148A (ja) * | 1986-02-25 | 1987-09-01 | Sanyo Electric Co Ltd | 半導体装置 |
| DE3631957A1 (de) * | 1986-09-19 | 1988-03-31 | Siemens Ag | Schaltungsanordnung zum ausschalten von transistoren in darlington-schaltung |
| GB9127476D0 (en) * | 1991-12-30 | 1992-02-19 | Texas Instruments Ltd | A semiconductor integrated circuit |
| JPH05243259A (ja) * | 1992-03-03 | 1993-09-21 | Mitsubishi Electric Corp | バイポーラトランジスタ及びその製造方法並びにダーリントントランジスタ及びその製造方法 |
-
1980
- 1980-02-13 JP JP1615280A patent/JPS56112751A/ja active Granted
-
1981
- 1981-02-03 GB GB8103251A patent/GB2069787B/en not_active Expired
- 1981-02-10 CA CA000370458A patent/CA1154172A/en not_active Expired
- 1981-02-11 DE DE3104743A patent/DE3104743C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1154172A (en) | 1983-09-20 |
| GB2069787A (en) | 1981-08-26 |
| DE3104743A1 (de) | 1982-01-07 |
| GB2069787B (en) | 1985-01-03 |
| JPS56112751A (en) | 1981-09-05 |
| DE3104743C2 (de) | 1983-12-22 |