JPS58166779A - 発光ダイオ−ド - Google Patents

発光ダイオ−ド

Info

Publication number
JPS58166779A
JPS58166779A JP58037215A JP3721583A JPS58166779A JP S58166779 A JPS58166779 A JP S58166779A JP 58037215 A JP58037215 A JP 58037215A JP 3721583 A JP3721583 A JP 3721583A JP S58166779 A JPS58166779 A JP S58166779A
Authority
JP
Japan
Prior art keywords
layer
substrate
silicon carbide
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58037215A
Other languages
English (en)
Japanese (ja)
Inventor
クラウス・ワイリツヒ
ギユンタ−・チ−グラ−
ル−ドウイツヒ・ホフマン
デイ−トマ−ル・タイス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of JPS58166779A publication Critical patent/JPS58166779A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

Landscapes

  • Led Devices (AREA)
JP58037215A 1982-03-10 1983-03-07 発光ダイオ−ド Pending JPS58166779A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19823208638 DE3208638A1 (de) 1982-03-10 1982-03-10 Lumineszenzdiode aus siliziumkarbid
DE32086385 1982-03-10

Publications (1)

Publication Number Publication Date
JPS58166779A true JPS58166779A (ja) 1983-10-01

Family

ID=6157840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58037215A Pending JPS58166779A (ja) 1982-03-10 1983-03-07 発光ダイオ−ド

Country Status (3)

Country Link
US (1) US4531142A (https=)
JP (1) JPS58166779A (https=)
DE (1) DE3208638A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250770A (ja) * 1995-12-28 1996-09-27 Nichia Chem Ind Ltd 発光デバイスの製造方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4600935A (en) * 1984-11-14 1986-07-15 Rca Corporation Back-to-back diodes
JPS6347983A (ja) * 1986-08-18 1988-02-29 Sharp Corp 炭化珪素電界効果トランジスタ
CA1313571C (en) * 1987-10-26 1993-02-09 John W. Palmour Metal oxide semiconductor field-effect transistor formed in silicon carbide
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5061972A (en) * 1988-12-14 1991-10-29 Cree Research, Inc. Fast recovery high temperature rectifying diode formed in silicon carbide
JPH06103757B2 (ja) * 1989-06-22 1994-12-14 株式会社半導体エネルギー研究所 ダイヤモンド電子装置
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
US5378921A (en) * 1991-10-21 1995-01-03 Rohm Co., Ltd. Heterojunction multicollector transistor
US5394005A (en) * 1992-05-05 1995-02-28 General Electric Company Silicon carbide photodiode with improved short wavelength response and very low leakage current
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5406237A (en) * 1994-01-24 1995-04-11 Westinghouse Electric Corporation Wideband frequency multiplier having a silicon carbide varactor for use in high power microwave applications
CA2298491C (en) 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
CA2504098A1 (en) * 2002-12-20 2004-07-15 Cree, Inc. Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986193A (en) * 1973-02-08 1976-10-12 Jury Alexandrovich Vodakov Semiconductor SiCl light source and a method of manufacturing same
US3999206A (en) * 1974-11-04 1976-12-21 Vladimir Alexandrovich Babenko Semiconductor indicating device and method for production of same
SU773795A1 (ru) * 1977-04-01 1980-10-23 Предприятие П/Я А-1172 Светоизлучающий прибор
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250770A (ja) * 1995-12-28 1996-09-27 Nichia Chem Ind Ltd 発光デバイスの製造方法

Also Published As

Publication number Publication date
US4531142A (en) 1985-07-23
DE3208638C2 (https=) 1992-06-17
DE3208638A1 (de) 1983-09-22

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