DE3208638C2 - - Google Patents

Info

Publication number
DE3208638C2
DE3208638C2 DE3208638A DE3208638A DE3208638C2 DE 3208638 C2 DE3208638 C2 DE 3208638C2 DE 3208638 A DE3208638 A DE 3208638A DE 3208638 A DE3208638 A DE 3208638A DE 3208638 C2 DE3208638 C2 DE 3208638C2
Authority
DE
Germany
Prior art keywords
layer
silicon carbide
substrate body
radiation
counter electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3208638A
Other languages
German (de)
English (en)
Other versions
DE3208638A1 (de
Inventor
Claus Dr. Phil. 8000 Muenchen De Weyrich
Guenther Dr.Rer.Nat. 8520 Erlangen De Ziegler
Ludwig Dr.Rer.Nat. Hoffmann
Dietmar Dr.-Ing. 8000 Muenchen De Theis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19823208638 priority Critical patent/DE3208638A1/de
Priority to US06/466,921 priority patent/US4531142A/en
Priority to JP58037215A priority patent/JPS58166779A/ja
Publication of DE3208638A1 publication Critical patent/DE3208638A1/de
Application granted granted Critical
Publication of DE3208638C2 publication Critical patent/DE3208638C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

Landscapes

  • Led Devices (AREA)
DE19823208638 1982-03-10 1982-03-10 Lumineszenzdiode aus siliziumkarbid Granted DE3208638A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19823208638 DE3208638A1 (de) 1982-03-10 1982-03-10 Lumineszenzdiode aus siliziumkarbid
US06/466,921 US4531142A (en) 1982-03-10 1983-02-16 Light emitting diode having silicon carbide layers
JP58037215A JPS58166779A (ja) 1982-03-10 1983-03-07 発光ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823208638 DE3208638A1 (de) 1982-03-10 1982-03-10 Lumineszenzdiode aus siliziumkarbid

Publications (2)

Publication Number Publication Date
DE3208638A1 DE3208638A1 (de) 1983-09-22
DE3208638C2 true DE3208638C2 (https=) 1992-06-17

Family

ID=6157840

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823208638 Granted DE3208638A1 (de) 1982-03-10 1982-03-10 Lumineszenzdiode aus siliziumkarbid

Country Status (3)

Country Link
US (1) US4531142A (https=)
JP (1) JPS58166779A (https=)
DE (1) DE3208638A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4600935A (en) * 1984-11-14 1986-07-15 Rca Corporation Back-to-back diodes
JPS6347983A (ja) * 1986-08-18 1988-02-29 Sharp Corp 炭化珪素電界効果トランジスタ
CA1313571C (en) * 1987-10-26 1993-02-09 John W. Palmour Metal oxide semiconductor field-effect transistor formed in silicon carbide
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5061972A (en) * 1988-12-14 1991-10-29 Cree Research, Inc. Fast recovery high temperature rectifying diode formed in silicon carbide
JPH06103757B2 (ja) * 1989-06-22 1994-12-14 株式会社半導体エネルギー研究所 ダイヤモンド電子装置
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
US5378921A (en) * 1991-10-21 1995-01-03 Rohm Co., Ltd. Heterojunction multicollector transistor
US5394005A (en) * 1992-05-05 1995-02-28 General Electric Company Silicon carbide photodiode with improved short wavelength response and very low leakage current
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5406237A (en) * 1994-01-24 1995-04-11 Westinghouse Electric Corporation Wideband frequency multiplier having a silicon carbide varactor for use in high power microwave applications
JPH08250770A (ja) * 1995-12-28 1996-09-27 Nichia Chem Ind Ltd 発光デバイスの製造方法
CA2298491C (en) 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
CA2504098A1 (en) * 2002-12-20 2004-07-15 Cree, Inc. Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986193A (en) * 1973-02-08 1976-10-12 Jury Alexandrovich Vodakov Semiconductor SiCl light source and a method of manufacturing same
US3999206A (en) * 1974-11-04 1976-12-21 Vladimir Alexandrovich Babenko Semiconductor indicating device and method for production of same
SU773795A1 (ru) * 1977-04-01 1980-10-23 Предприятие П/Я А-1172 Светоизлучающий прибор
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element

Also Published As

Publication number Publication date
US4531142A (en) 1985-07-23
JPS58166779A (ja) 1983-10-01
DE3208638A1 (de) 1983-09-22

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee