TW488086B - Light emitting compound semiconductor device and its manufacturing method - Google Patents

Abstract

This invention provides a light emitting compound semiconductor device with single wire bonding, such as blue-light, green-light and bluish-green-light light emitting diode (LED), and its manufacturing method. The light emitting compound semiconductor device contains a GaN type semiconductor layer structure formed on an insulative substrate. The GaN type semiconductor layer structure includes an N type layer at the bottom, a P type layer at the top and a light-generating active layer sandwiched by the N type layer and the P type layer. The periphery area of the GaN type semiconductor layer structure is etched so that the exposed surface pf the periphery portion of the n type layer is lower than the central surface of the N type layer. An N type electrode is formed on the exposed surface of the N type layer, while a P type electrode is formed on the P type layer without electrically connecting with the N type electrode. A conductive layer is used to cover the sidewall and bottom surface of the insulative substrate and to electrically connect with the N type electrode. It is preferable to have an adhesion layer between the conductive layer and the sidewall and bottom surface of the insulative substrate to improve adhesion performance. According to this invention, the conductive layer can be a mirror reflector or a transparent layer.

Description

488086 V. Description of the invention (1) The present invention relates to a compound semiconductor device and a manufacturing method thereof. ^ The invention relates in particular to a light-emitting compound semiconductor device, such as a GaN-type light-emitting diode (LED), whose side walls and bottom are covered by a coating conductive layer, and Production method. Description In recent years, more and more attention has been paid to the use of GaN-type compound semiconductors as materials for manufacturing blue, blue, or blue-green light emitting devices, such as blue LEDs or blue laser diodes (LD). For example, a blue light LED generally has the following structure: including at least one n-type (^ 1 ^ -type = semiconductor layer,-host), formed from the f or doped ytterbium-type compound material, and at least one p Type 〇 ^ layer, which is sequentially stacked on a substrate. In the manufacturing of the conventional blue LED, the traditional sapphire is often used as the material for the substrate of the blue LED. Unlike other semiconductor devices, For the semiconductor substrate used, sapphire is an electrically insulating material. Because of this, it is impossible to directly form an n-type electrode on the sapphire substrate. The solution to the problem is to partially expose the n-type compound semiconductor by etching the blue LED. In order to provide a conductive surface that can be effectively formed as a type of electrode. Conventional blue Refer to FIG. 1 for a more detailed understanding of the aforementioned conventional blue LED.

488086 V. Description of the invention (2) The light LED mainly includes a sapphire substrate 101, an nsGaN-type compound semiconductor layer 102, an active layer 103 'formed of an intrinsic or doped type compound semiconductor material, and A p-type GaN-type compound semiconductor layer 1. As described previously, an n-type electrode 1 is formed on the exposed surface of the n-type (^^-type compound semiconductor layer 102), and a p-type electrode 106 is formed on the p-type GaN-type compound semiconductor layer 04.

However, the conventional blue LED shown in Fig. 1 has several disadvantages described below. First, when the insulated sapphire substrate 101 of the blue LED is placed on the surface of the cup-shaped lead frame 107, the insulated sapphire substrate 101 of the blue LED cannot form an electrical connection with the cup-shaped lead frame 107. In order to electrically connect the blue LED and the cup-shaped lead frame 107, a metal bonding wire 108 must be used to electrically bond the n-type electrode 105 / to the surface of the cup-shaped lead frame 107, as shown in FIG. 2. Since it is necessary to use another metal bonding wire 〇09 to electrically bond the ρ-type electrode 〇06 to a separate lead frame 11 〇, the wire bonding process must be performed twice to fully bond the feature particles via a bonding wire All dimensions are large, structure and arrangement top view. Therefore, the current is uniform in the up and down direction, so the conventional blue LED is known. The metal bonding wire 109 is preferably bonded to the p-type electrode 106 with the pad 111. Due to the large increase in the process complexity of the conventional blue LED and the blue LED, the high manufacturing cost is caused.

As shown in FIG. 3, the electrodes 105, 106 of the conventional blue light LED are non-f, and FIG. 3 is the blue light LEJ shown in FIG. 1. Symmetric and flowing along tf. Therefore, it is difficult for the conventional blue LED to reach the moon characteristics. Since the current dispersion characteristics are not uniform, there are several high current density points in D, which are easy

Page 6 488086 V. Description of the invention (3) Damage caused during operation. Moreover, the well-known electrostatic discharge (electrostatic discharge) problem inevitably occurs on the insulating sapphire substrate. These shortcomings greatly reduce the performance and reliability of conventional blue LEDs. According to + expectations, this provides a blue light that achieves a single wire bonding feature #-$ greatly increases process complexity and manufacturing costs. It is also expected that a kind of blue light that achieves uniform current dispersion characteristics and eliminates the problem of clear blue light will be added. It is expected to provide an I-light LED with a mirror-like reflection on the bottom surface to increase the luminous efficiency of the blue-light LED. W. Summary of the invention The arrangement of the present invention results in a reduction in cost. The arrangement of the present invention It has the device of the present invention, which is free of the device of the present invention, and has a top surface including an insulating edge substrate according to the present invention. The purpose is to provide a light-emitting compound semiconductor with a wire bonding feature. Therefore, the process complexity The purpose of simplification and manufacturing is to provide a light-emitting compound semiconductor with poor current dispersion characteristics. Conductor clothing = to provide-a kind of light-emitting compound semiconductor device Φ-and the purpose is to provide a light-emitting compound semiconductor step on the bottom surface Mirror reflector. '&Quot; The first aspect of Ming, a light-emitting compound half-substrate;-the first-GaN ^ conductor layer, opened / closed Of the central portion, the brother of a GaN-type semiconductor layer

Page 7 488086 V. Description of the invention (4) The surface is a surface higher than the peripheral portion of the first GaN-type semiconductor layer; an active layer is formed above the surface of the central portion of the first GaN-type semiconductor layer for Generating light; a second GaN-type semiconductor layer formed over the active layer; a first electrode formed on the second GaN-type semiconductor layer; and a conductive layer covering the sidewall of the insulating substrate and The bottom surface is electrically connected to a sidewall of the first GaN-type semiconductor layer. Manufacture of a light-emitting compound semiconductor device according to a first aspect of the present invention; forming a first GaN-type radial pilot bottle booster layer on the first GaN-type semiconductor layer μ-1 ... The semiconductor layer in the active method includes: preparing a The insulating base is opposite to the insulating substrate; forming a main

The upper part is used to generate light; a second baN-type semiconductor layer is formed on the recording layer; and the peripheral portions of the second GaN-type semiconductor layer, the active layer, and the first GaN-type semiconductor layer are engraved, respectively. So that the exposed surface of the first edge portion of the first GaN-type half is lower than the surface of the shoulder of the first GaN-type semiconductor = 邛; forming a first electrode on the second GaN-type half _ bottom ^ θ = And coating a conductive layer to cover the sidewall of the insulating substrate-M Ϊ connected to the sidewall of the first GaN-type semiconductor layer. Type semi-body; in a second aspect of ^, a second electrode is formed on the surface of the edge part of the first Gaf ㈣-type semiconductor layer body ...

Lightning guide s y /, on the bottom surface. A sidewall layer covering the insulating substrate is electrically connected to the second electrode. According to the present invention, the side wall and the bottom side A of the second stage f. A core 7, an adhesion layer is formed on the insulating base

The ancient ^-& surface ′ was subsequently formed by the coating guide to the Pu Weiwei:. The adhesion layer is used to enhance the first layer. The adhesion between the wooden pole and the conductive layer

Page 8 488086

According to a fourth aspect of the present invention, the conductive layer is a light transmitting layer. As for the light-transmitting conductive layer, an indium tin oxide layer, a cadmium tin oxide layer, an oxide layer, or a thin metal layer may be used, and the thickness of the thin metal layer is between 0.001 // m to 1 // In the range of m, Au, Ni, pt, A1, Sn,

In, Cr, Ti, or an alloy thereof. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT The following description and accompanying drawings will make these and other object features and advantages of the present invention more apparent. A preferred embodiment according to the present invention will be described in detail with reference to the drawings. [First Embodiment] Figs. 4 (a) to 4 (e) are sectional views showing manufacturing steps of a blue LED 400 according to a first embodiment of the present invention. Referring to FIG. 4 (a) ', a thick-sounded q 2-r, an order n d // m to 5 // m n-type layer 402 is first formed on an insulating substrate 401. The total & gan ρ νΐ Λ _ upper, lower, and lower base plates 4 0 1 are often formed of sapphire. On the η-type layer 402, select a distance of η] and an η-type upper second with a degree of 0.1 / // m to 0.3: an active layer for emitting light having a degree of 500 Α to 200 ° Α ? ', P-type tie layer 405 of 1 to 0.3, and n9 ^. ^ "M-type p-type layer 406 are sequentially formed. The mother layer of these layers 402 to 406 must be η μ τη a A p 〇s you are formed from a GaN-type compound semiconductor material. For example, &, you can use T7Π-Sifan compound semiconductor material In A1 Gabu χ_νΝ to form a right / ΠΠ9 is different. Conductive type and impurity concentration of each layer 402 to 406, in which the Mohr fraction γ α ^ .1 ^. Early meaning '乂 satisfies 0 $ x < l'0 $ y < l and x + y = l. Should be noted For: 摅 士 & i According to the structure of the blue LED 400 of the present invention,

Page 9 488086 V. Description of the invention (6) ^ Ren: the form of two hopes, that is, the actual blue LED 400. The brother has always explained in the example t. According to Fig. 4 (b), by using shirt printing with a predetermined pattern, some surnames are inscribed with indigo umbrella TF j π n, and the blue first LED 400 is etched by a knife. In order to remove the blue LED for 4,000 weeks, the mouth P knife. By precisely controlling the etching time, the etching-type layer is better to suffer from light residue = the surface of chrome showing 402a at the edge of the trowel is lower than the surface 402b of the center portion of the n-type layer 402, that is, the n-type layers 4 and 2 The interface between the tying layers 403. After the etching process is completed, the blue LED 400 becomes a ground-shaped structure. The position of the upper side wall 403 is lower than the lower side: it is located more inward. In this embodiment, an etching process is preferred. & Eight Referring to Fig. 4 (c), a p-type electrode 409 is formed on the surface of the p-type layer 406. The P-type electrode 409 may be formed of any metal capable of forming a P-type ohmic contact with a p-type GaN-type compound semiconductor material. In this embodiment, for example, the 'P-type electrode 409 is formed of Ni, butadiene, Al, Au, or an alloy thereof. During the formation of the P-type electrode 4 09, it is best to insert a thickness of 50A to

TCL) 407 between the p-type layer 406 and the p-type electrode 409 to substantially cover the entire surface of the p-type layer 406, thereby simultaneously increasing the luminous efficiency of the blue LED 400, and the uniformity of the electrical dispersion. TCL 407 is a light-transmissive ohmic contact layer formed of a conductive material such as Au, Ni, pt, Al, Sn, In, Cr, Ti, or an alloy thereof. 1 Refer to FIG. 4 (d) ′-a polyvinyl chloride (p〇iyvinyi chloride,

Page 10 488086 Description of the 5 'invention (7) The elastic tape 410 formed by PVC) is then disposed on the blue LED 400 to cover the top side and the upper side wall 400a of the blue LED 400 and the exposed surface 402a of the n-type layer 402. . Therefore, only the lower side wall 400b and the bottom surface 400c of the blue LED 400 are exposed. Referring to FIG. 4 (e), a conductive layer 411 is then coated to directly cover the lower side wall 400b and the bottom surface 400c of the blue LED 400, and an n-type electrode is provided. At this time, the top side and the upper side wall of the blue LED 400 and the exposed surface 4 of the n-type layer 4 2 4 are protected by the elastic tape 4 1 0 to prevent contact with the conductive layer 4 1 1 . As for the material of the conductive layer 41, any metal capable of forming an n-type ohmic contact with the n-type layer 4 02 may be used. For example, the material of the conductive layer 411 may be Au, Al, Ti, Cr, or an alloy thereof. After the conductive layer 411 is formed, the elastic tape 410 is removed to expose the top side and the upper side wall 400a of the blue LED 400 and the exposed surface 402a of the n-type layer 402. Since the conductive layer 411 is electrically connected to the 11-type layer 402 at the side wall of the n-type layer 402, the conductive layer is effectively used as an n-type electrode. Therefore, the first light LED 400 according to the present invention is completed. Fig. 5 is a top view of the blue light LjD 400 according to the first embodiment of the present invention shown in Fig. 4 (e). Obviously, the blue LED is 400%? The structure and arrangement of the conductive layer 411 as the n-type electrode "so that the current in the blue LED 40 0 荽 μ d7 a ^ ^ to the conductive layer 4u, and a J-type electric current flow • Xi Ji Chai Lama & The direction of 耵 is evenly dispersed, as shown in Figure 5. Therefore, the blue light led 4 according to the present invention achieves uniform current dispersion characteristics. 桎 Efficient, so there is no ancient φ in the blue LED 400 Weeping—A special current density point exists uniformly in the blue light. Blue LED 4〇〇

488086 V. Description of Invention (8) The reliability and service life are greatly enhanced. It should be noted that the shape of the p-type electrode = 9 and the conductive layer 411 is not limited to the specific shape shown in Fig. 5, but may be any desired shape. Fig. 6 is a cross-sectional view showing the manner in which the blue light [ED 400] according to the first embodiment of the present invention is bonded to the cup-shaped lead frame 107 and the separated lead frame 110. Because the conductive layer 411 is electrically connected to the n-type layer 402 and covers the bottom surface 40c of the blue light LEE 400, when the blue LED 400 is placed on the cup-shaped lead frame 107, the n-type layer 402 passes through the conductive layer 411 And it is electrically connected to the cup-shaped lead frame 107 = surface. In other words, it is not necessary to use any bonding wires to electrically connect the O-type layer 40 to the cup-shaped lead frame 107. Therefore, only the electrical connection between the p-type electrode 409 and the separated lead frame ^ 0 requires a bonding wire 109. Therefore, the monitor light LED 400 according to the present invention achieves a single wire bonding feature, thereby simplifying process complexity and reducing manufacturing costs. In addition, the conductive layer 4U covering the square side wall 40 of the blue LED 400 and the bottom surface 400c not only provides an ESD protection path, but also acts as the same mirror reflector, allowing the light emitted from the active layer 404 to be Reflected back to increase the luminous efficiency of the blue LED 400. [Second Embodiment] Figs. 7 (a) to 7 (c) are diagrams showing the manufacturing steps of the LED 700 according to the present invention. In Figs. 7 (a) to 7 (c), the blue clip LED 700 is similar to the blue LED 400 shown in Fig. 4 (a) \ 尤尤 # ^ v ^ a ~ () The components are referred by similar references The symbol 捭 本 木 卜 τ _ Tu — is currently represented. To simplify the description, only the second embodiment is different from the first embodiment in the following description. Only

mm

V. Description of the invention (9) Referring to FIG. 7 (a), the semiconductor structure shown in FIG. 4 (b) :: type electrode 708 is formed on the exposed surface "M" of the n-type layer 4.2; above the electrode surface Sidewall 400a, and a p-type electrode 409 is formed at 4 ^ 9 of the P-type layer 406 & is not electrically connected to the n-type electrode 708 ° N-type and p-type electrodes 708 and 409 All of the n-type and p-type GaN-type compound semiconductor materials, which can form n-type and p-type ohmic contacts, respectively, and Lu, n-type and p-type electrodes 708 and 409 are each It is formed of m, Ti, Al, Au, or an alloy thereof. Referring to FIG. 7 (b), an elastic tape 41 formed of PVC is then disposed on the supervising LED 700 to cover the top side of the blue LED 700. Therefore, only the bottom side wall 400b and the bottom surface 400c of the n-type electrode 708 and the blue LED 700 are exposed. Referring to FIG. 7 (c), a conductive layer 411 is then applied to directly cover the n-type electrode 708 of the blue LED 700, the lower sidewall 400b, and the bottom surface 4> 00c. At this time, the top side of the blue LED 700 is secured by the elastic tape 41, so as not to contact the conductive layer 4 丨. For example, the material of the conductive layer 4 丨 1 can be Au, Al, Ti, Cr, or an alloy thereof. After the conductive layer 411 is formed, the elastic tape 410 is removed to expose the top side of the blue LED 700. Therefore, 'Blue Light LE according to the second embodiment of the present invention]) is completed. FIG. 8 shows a method of bonding the blue light source ^^ 700 to the cup-shaped lead frame 107 and the separated leadframe 1 110 according to the second embodiment of the present invention. Because the conductive layer 411 is electrically connected to the type electrode 708 and covers the bottom surface of the blue light 470, the bottom surface is 40 ° c. Therefore, when the blue light LED 700 is placed on the cup-shaped lead frame 107, the n-type electrode 708 is conductive via The layer 411 is electrically connected to the cup-shaped lead frame 1 07. Table 488086 V. Description of the Invention (ίο) --- surface. In other words, the n-type electrode 708 is electrically connected to the cup-shaped lead frame 107 without using any bonding wires. Therefore, only the electrical connection between the P-type electrode 40 g and the separated lead frame 110 requires a bonding wire 109. Therefore, the blue LED 700 according to the present invention achieves a single wire bonding feature, thereby simplifying the process complexity and reducing the manufacturing cost. ', [Third embodiment]

Fig. 9 is a sectional view showing a blue LED 900 according to a third embodiment of the present invention. In FIG. 9, the components of the blue LED 900 similar to the monitor LED 700 shown in FIGS. 7 (a) to 7 (c) are represented by similar reference symbols. For the sake of simplification, only the third embodiment is different from the second embodiment in the following description. In the manufacturing process of the blue LED 900, all steps are the same except that an adhesion layer 901 is applied to cover the n-type electrode 708, the lower side wall 400b, and the bottom surface 400c of the LED structure 900 before the conductive layer 411 is formed. The manufacturing steps of the blue LED 700 shown in FIGS. 7 (a) to 7 (c). The adhesion layer 901 is used to enhance the adhesion between the side wall and the bottom surface of the insulating substrate 401 and the conductive layer 411. The material of the adhesion layer 001 may be Ti, Ni, Al, Cr, Pd, or any metal that can enhance the adhesion between the sidewall and the bottom surface of the insulating substrate 401 and the conductive layer 411. [Fourth Embodiment] FIG. 10 is a cross-sectional view showing a blue LED 100 according to a fourth embodiment of the present invention. In FIG. 10, the blue LED 1 00 is similar to that shown in FIGS. 7 (a) to 7 (c).

Page 14 488086 V. Description of the invention (π) The components of the blue LED 70 0 are represented by similar reference symbols. To simplify the description, only the fourth embodiment is different from the second embodiment in the following description. As described in the second embodiment, the light generated in the active layer 404 then passes through the top side of the blue LED 700, that is, the p-type layer 406 to emit blue light led 700. However, the fourth embodiment provides a blue LED 1000, which causes the light generated in the active layer 404 to be emitted from the bottom side of the blue LED 1000 and the insulating substrate 401. In order to achieve the blue LED 100 of the fourth embodiment, the conductive layer 1001 is formed as a light-transmitting layer to allow light generated in the active layer 404 to penetrate it. As for the light-transmitting conductive layer 1001, an indium-tin-oxide (ITO) layer, a cadmiiim-tin-oxide (CT0) layer, and zinc oxide (zinc 〇xide,

ZnO) layer, or a thin metal layer, the thickness of the thin metal layer is in the range of 0 · m to 1 // m and is made of Au, Ni, Pt, Al, Sn, In, Cr T i, or an alloy thereof form. In addition, the P-type electrode 10 02 is formed as a substantially frosted layer, so the main surface ^ ^ 7 is formed on the surface of the P-type layer 406. In the fourth embodiment, the p-type electrode 丨 〇 02 is a

The reflector reflects the light generated in the active layer 404, and exhibits luminous efficiency. Add the blue LED when the blue LED 1000 of the fourth embodiment is placed on the cup type. The 'blue LED 1000' is turned upside down, and it is on the surface of the cup lead frame 107, such as Figure 10 shows. == 电 = The photoconductive layer 1001 is electrically connected to the separated lead frame via the -bonding wire 109 488086 V. Description of the invention (12) 11 0. In order to enhance the bonding strength between the light-transmitting conductive layer 1000 and the bonding wire 009, it is better to use a bonding pad 1003. Similar to the second embodiment, the blue light LE of the fourth embodiment requires only one joint, 109 ', although the placement orientation is different. Therefore, the blue LED 1000 also achieves a single wire bonding feature, thereby simplifying process complexity and reducing manufacturing costs. Furthermore, the light-transmitting conductive layer 1001 covering the side walls and the bottom surface of the insulating substrate 40 1 of the blue LED 1000 provides an ESD protection path. Ϊ ΐ 'Ming has been explained by taking the preferred embodiment as an example, as follows: The invention is not limited to the disclosed embodiment. On the contrary, this month's thoughts are intended to cover modifications and similar configurations for those familiar with this technique. Therefore, t ^ 66 ^ Μ, ρ; ^ 申 of the application for "糸 月" declares that the scope of patent patents should only be based on the most 5 interpretations, and U includes all such modifications. 488086 Schematic illustration Figure 1 shows the conventional knowledge Fig. 2 is a cross-sectional view showing the conventional blue light LED of Fig. 1 placed on a cup-shaped bow; Fig. 3 is a block diagram of the conventional blue light LED of Fig. 1 Top view 4 (a) to 4 (e) of the arrangement of the electrodes are sectional views showing the manufacturing steps of the LED according to the first embodiment of the present invention; first view of the arrangement of the electrodes of the light LED · Figure b shows the figure η, • A cross-sectional view of a female LED placed on a cup-shaped lead frame. Figures 7 (a) to 7 (c). The blue light cross section of the second embodiment of the present invention is shown in FIG. 7 (the blue light led of 0 is placed on a cup-shaped lead frame, and FIG. 9 is a display of the iridescent rainbow light a. Μ + the blue light of the third embodiment of the present invention A cross-sectional view of a LED placed on a cup-shaped lead frame; FIG. 10 shows a fourth embodiment of a blue LED according to the invention on a cup-shaped lead frame. FIG surface. [Description of Symbols] 101 102 103 η sapphire substrate type GaN-type compound semiconductor layer, the active layer

104 p-type GaN-type compound semiconductor layer

Page 17

488086

Brief description of the drawing 105 n-type electrode 106 p-type electrode 107 Cup-shaped lead frame 108 Metal bonding wire 109 Metal bonding wire 110 Separate lead frame 111 Bonding pad 400 Blue LED 40 0a Upper side wall 40 0b Lower side wall 40 0c Bottom surface 401 Insulation Substrate 402 n-type layer 40 2a exposed surface 402b central part of the table 403 n-type tie layer 404 active layer 405 p-type tie layer 406 p-type layer 407 transparent contact layer 409 p-type electrode 410 elastic tape 411 conductive layer 700 blue light LED

Page 18 488086 Schematic description 708 p-type electrode 900 blue LED 901 adhesion layer 1000 blue LED 1001 conductive layer 1002 p-type electrode 1003 bonding pad _ 画 _1 丨 1 page 19

Claims (1)

488086 6. Scope of patent application 1. A light-emitting compound semiconductor device including: an insulating substrate; a first GaN-type semiconductor layer formed on a top surface of the insulating substrate; and a surface of a central portion of the first GaN-type semiconductor layer Is higher than the surface of the peripheral portion of the first GaN-type semiconductor layer; an active layer is formed above the surface of the central portion of the first GaN-type semiconductor layer to generate light; a second GaN-type semiconductor layer is formed Over the active layer; a first electrode formed on the second GaN-type semiconductor layer; and a conductive layer covering the sidewall and bottom surface of the insulating substrate through coating and electrically connected to the first GaN-type semiconductor layer Of the sidewall. 2. The light-emitting compound semiconductor device according to item 1 of the patent application scope, further comprising: a second electrode formed on a surface of a peripheral portion of the first GaN-type semiconductor layer and not electrically connected to the active layer and the second A GaN-type semiconductor layer and the first electrode, wherein the conductive layer is electrically connected to the second electrode. 3. The light-emitting compound semiconductor device according to item 1 of the application, wherein the first GaN-type semiconductor layer is doped to a first conductivity type, and the second GaN-type semiconductor layer is doped to a second conductivity type. 4. The light-emitting compound semiconductor device according to item 3 of the patent application scope, wherein Page 20 6. Scope of patent application The -conducting type is -n type and the second conductive type is type 1 type. The light-emitting compound semiconductor device containing the third item enclosed by the patent application M, further includes a first binding layer, formed in a mountain, formed on the M-first conductive GaN-type semiconductor material and the GaN-type semiconductor layer and the Between the active layers; a restraint layer, rt », is formed between the active layer of the second conductive type hN type semiconductor material and the second GaN type semiconductor layer. 6. The scope of the patent as claimed includes: The light emitting compound semiconductor device of item 1 further includes an adhesion layer between the central layer. "" The side wall and bottom surface of the insulating substrate and the conductive 7. If the scope of the patent application flute τ s, the conductive layer is a light-emitting compound semiconductor device of item ☆, among which the small becomes a mirror reflector. 8 · 如The scope of the application for patent Chu 15 This conductive layer is selected from the light emitting compound semiconductor device of Guodi item 1, among which is an oxide chain ^^ a group consisting of an indium tin oxide layer, a cadmium tin oxide layer, and a ping layer 9 · As in the patent application, this conductive layer is a light-emitting compound semiconductor device with a tube thickness of 1 item, in which the thickness is between 0.001 and 1 / zm. Page 21 Ding Binding Metal Layer, Complex Acoustics, .... 488086 VI. The scope of patent application I is within the scope of 'from Au, Ni, pt, A1, Sn, In, Ti, and It is formed from one of the groups of alloys. 10. The light-emitting compound semiconductor device according to item 1 of the scope of patent application, wherein the GaN-type semiconductor is a quaternary compound semiconductor, and the mole ratio X 'y satisfies 〇 $ χ < ι, 〇 and X + corpse 1. [1. A method for manufacturing a light-emitting compound semiconductor device, including the following steps: preparing an insulating substrate; forming a __GaN type semiconductor layer on the insulating substrate; forming an active layer over the? Rst GaN type semiconductor layer, To generate light; to turn on a second GaN-type semiconductor layer over the active layer; to etch the peripheral portions of the second GaN-type semiconductor layer, the active layer, and the G / N gas semi-conductor layer, so that The first surface of the first GaN-type semiconductor layer and the exposed surface of 彖 σ 彖 are lower than the surface of the central portion of the first GaN-type semiconductor layer; = a first-electrode on the second GaN-type semiconductor layer; and 4f is covered with a conductive layer to cover the sidewall and the bottom surface of the insulating substrate and is electrically connected to the sidewall of the -GaN-type semiconductor layer. 12. If the method for manufacturing a light-emitting compound semiconductor device according to item 1 of the patent application scope further includes the following steps: 488086 6. Scope of patent application A second electrode is formed on the exposed surface of the peripheral portion of the first GaN-type semiconductor layer, and is not electrically connected to the active layer, the second GaN-type semiconductor layer, and the first electrode. 13. The method for manufacturing a light-emitting compound semiconductor device according to item 11 of the application, wherein the first GaN-type semiconductor layer is doped to a first conductivity type, and the second GaN-type semiconductor layer is doped to a second conductivity type. . 14. The manufacturing method of the light-emitting compound semiconductor device according to item 13 of the application, wherein the first conductivity type is an n-type and the second conductivity type is a p A-type. 15. The method for manufacturing a light-emitting compound semiconductor device according to item 13 of the patent application scope, further comprising the following steps: forming a first conductive type tie layer on the first GaN type semiconductor layer; forming a second conductive type tie layer On the active layer; and etching the peripheral portions of the first tie layer and the second tie layer separately. 16. The method for manufacturing and manufacturing a light-emitting compound semiconductor device according to item 11 of the application, further comprising the following steps: before the step of coating the conductive layer, forming an adhesion layer on the side wall and the bottom surface of the insulating substrate on. Page 23 4880S6 VI. Application for Patent Scope 17. One method of manufacturing a light-emitting compound semiconductor device, wherein the conductive layer is formed as a mirror reflector. 18. According to item u of the scope of patent application-manufacturing method of light-emitting compounds, wherein the conductive sound is to be written in 6th grade clothes "freedom"-indium tin oxide layer, a "tin emulsion layer, and- One of the groups of zinc oxide layers. Please refer to the eleventh item of the patent scope-the manufacturing method of the light-emitting compound semiconductor device. The thickness of the metal layer is in the range from ^ to 1 _, which is selected from the group consisting of Formed by a material. In other words, one of the members of the group consisting of gold and gold Please enclose the hAlyGU of the eleventh light-emitting compound semiconductor device.刀 刀 刀 羊 x y satisfies 〇 $ χ < ι, 〇 $ y < 1 and