JPS5815939B2 - タンソシツザイリヨウオ ジヨキヨスルホウホウ - Google Patents

タンソシツザイリヨウオ ジヨキヨスルホウホウ

Info

Publication number
JPS5815939B2
JPS5815939B2 JP48091783A JP9178373A JPS5815939B2 JP S5815939 B2 JPS5815939 B2 JP S5815939B2 JP 48091783 A JP48091783 A JP 48091783A JP 9178373 A JP9178373 A JP 9178373A JP S5815939 B2 JPS5815939 B2 JP S5815939B2
Authority
JP
Japan
Prior art keywords
oxygen
ozone
photoresist
substrate
weber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48091783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS503958A (show.php
Inventor
ドナルド・アレン・ボロン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS503958A publication Critical patent/JPS503958A/ja
Publication of JPS5815939B2 publication Critical patent/JPS5815939B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
JP48091783A 1972-08-18 1973-08-17 タンソシツザイリヨウオ ジヨキヨスルホウホウ Expired JPS5815939B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28176472A 1972-08-18 1972-08-18

Publications (2)

Publication Number Publication Date
JPS503958A JPS503958A (show.php) 1975-01-16
JPS5815939B2 true JPS5815939B2 (ja) 1983-03-28

Family

ID=23078694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48091783A Expired JPS5815939B2 (ja) 1972-08-18 1973-08-17 タンソシツザイリヨウオ ジヨキヨスルホウホウ

Country Status (5)

Country Link
JP (1) JPS5815939B2 (show.php)
DE (1) DE2341216C2 (show.php)
FR (1) FR2196611A5 (show.php)
GB (1) GB1408067A (show.php)
IT (1) IT992983B (show.php)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
JPS5856340A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体ウエハ浄化方法
DE3310117A1 (de) * 1982-04-05 1983-10-06 Maxwell Lab Verfahren zur photochemischen entseuchung
JPH0612766B2 (ja) * 1983-03-04 1994-02-16 株式会社精密エンタプライズ 光照射装置
JPS6039239U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS6039238U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS6039240U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS6049630A (ja) * 1983-08-29 1985-03-18 Fujitsu Ltd 半導体装置の製造方法
JPS6053029A (ja) * 1983-09-02 1985-03-26 Ushio Inc 紫外線洗浄装置
JPS6127635A (ja) * 1984-07-17 1986-02-07 Samuko Internatl Kenkyusho:Kk フオトレジストの高能率乾式除去装置
JPS6153335A (ja) * 1984-08-22 1986-03-17 Tohoku Richo Kk プラスチツクのドライエツチング法
JPS6177852A (ja) * 1984-09-26 1986-04-21 Fujitsu Ltd パターン形成方法
JPH0622220B2 (ja) * 1984-11-19 1994-03-23 富士通株式会社 レジスト灰化方法
JPS61163342A (ja) * 1985-01-14 1986-07-24 Ricoh Co Ltd フオトレジスト除去方法
JPH0810690B2 (ja) * 1987-01-29 1996-01-31 東京エレクトロン株式会社 アッシング方法及びアッシング装置
US5028243A (en) * 1988-12-22 1991-07-02 University Of Dayton Gas chromatography methods and apparatus
US4923486A (en) * 1988-12-22 1990-05-08 University Of Dayton Gas chromatography methods and apparatus
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
DE4113523A1 (de) * 1991-04-25 1992-10-29 Abb Patent Gmbh Verfahren zur behandlung von oberflaechen
JPH05109674A (ja) * 1991-10-18 1993-04-30 Ushio Inc レジスト膜の灰化方法と灰化装置
DE4202158C1 (show.php) * 1992-01-27 1993-07-22 Siemens Ag, 8000 Muenchen, De
US5417826A (en) * 1992-06-15 1995-05-23 Micron Technology, Inc. Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2443373A (en) * 1943-08-20 1948-06-15 Victor N Borsoff Method of removing carbon and carbonaceous matter
US3664899A (en) * 1969-12-29 1972-05-23 Gen Electric Removal of organic polymeric films from a substrate

Also Published As

Publication number Publication date
JPS503958A (show.php) 1975-01-16
DE2341216C2 (de) 1985-11-07
DE2341216A1 (de) 1974-02-28
FR2196611A5 (show.php) 1974-03-15
GB1408067A (en) 1975-10-01
IT992983B (it) 1975-09-30

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