JP6948808B2 - 基板の蒸気相ヒドロキシルラジカル処理のためのシステム及び方法 - Google Patents
基板の蒸気相ヒドロキシルラジカル処理のためのシステム及び方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 130
- 238000000034 method Methods 0.000 title claims description 50
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 title claims description 45
- 239000012808 vapor phase Substances 0.000 title 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 154
- 238000012545 processing Methods 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 43
- 229910052799 carbon Inorganic materials 0.000 claims description 41
- 230000005855 radiation Effects 0.000 claims description 21
- 150000001451 organic peroxides Chemical class 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 6
- 150000001336 alkenes Chemical class 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008569 process Effects 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 150000002978 peroxides Chemical class 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitrogen oxide Substances O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000000802 evaporation-induced self-assembly Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- -1 hardmasks Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229960003753 nitric oxide Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012985 polymerization agent Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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Description
本願は、2016年3月9日に出願された米国仮出願第62/305,715号の優先権を主張するものであり、その全内容は参照により本明細書に組み込まれる。
前記基板処理システムの蒸気処理領域内で過酸化水素蒸気を受け取るステップと、
前記蒸気処理領域内の前記過酸化水素蒸気を処理することによってヒドロキシルラジカル蒸気を生成するステップと、
前記ヒドロキシルラジカル蒸気及び残りの過酸化水素蒸気を前記基板の前記作業表面に向けるステップ(directing)であって、前記炭素含有材料を化学的に改質させる(modified)、ステップと、
を含む。
過酸化水素蒸気を受け取るように構成された入口と、
ヒドロキシルラジカル蒸気を生成するように、前記過酸化水素蒸気を十分なUV放射に曝露するように構成された紫外線(UV)源と、
前記ヒドロキシルラジカル蒸気及び前記残りの過酸化水素蒸気を基板に向けるように構成された出口であって、前記基板は前記基板の作業表面上に炭素含有材料の層を含み、前記炭素含有材料を化学的に改質させる、出口と、
を含む。
ことができる。
O2+hv(<230nm) → 2O
O+O2+M=O3+M (Mは不活性な第3のボディ、例えばN2)
O3+hv(254nm) → O+O2
O+H2O → 2HO・
H2O2+hv (<300nm) = 2HO・
102 基板処理チャンバ
104 基板
106 UV源
108 UV透過窓
110 H2O2発生器
112 蒸気オゾン発生器
114 蒸気発生器
118 コントローラ
120 蒸気処理領域
Claims (14)
- 基板を処理するための方法であって、
基板処理システムの処理チャンバ内に基板を位置決めするステップであって、前記基板は、前記基板の作業表面上に炭素含有材料の層を包含するステップと、
前記基板処理システムの蒸気処理領域内で過酸化水素蒸気を受け取るステップであって、前記蒸気処理領域は、前記処理チャンバの外側に配置されるステップと、
前記蒸気処理領域内の放射に前記過酸化水素蒸気を暴露することによってヒドロキシルラジカル蒸気を生成するステップであって、前記放射が前記基板の作業表面に到達することがないステップと、
前記ヒドロキシルラジカル蒸気及び残りの過酸化水素蒸気を前記基板の作業表面に向けるステップであって、前記炭素含有材料を化学的に改質させる、ステップと、
を含み、ここで、前記ヒドロキシルラジカル蒸気を前記基板の前記作業表面に向けるステップは、前記基板を摂氏100度未満に維持することを包含する、方法。 - 十分なヒドロキシルラジカル蒸気が、炭素含有材料の前記層と接触して、前記炭素含有材料を酸化して気体状態にする、請求項1に記載の方法。
- 酸化された炭素含有材料を前記処理チャンバから除去するステップをさらに含む、請求項2に記載の方法。
- 前記過酸化水素蒸気を暴露するステップが、前記過酸化水素蒸気を紫外線に暴露するステップを包含する、請求項1に記載の方法。
- 前記過酸化水素蒸気を紫外線に暴露するステップが、十分な紫外線に暴露することを包含し、前記ヒドロキシルラジカル蒸気が前記過酸化水素蒸気から生成される、請求項4に記載の方法。
- 基板を処理するための方法であって、
基板処理システムの処理チャンバ内に基板を位置決めするステップであって、前記基板は、前記基板の作業表面上に炭素含有材料の層を包含するステップと、
前記基板処理システムの蒸気処理領域内で過酸化水素蒸気を受け取るステップと、
前記蒸気処理領域内の前記過酸化水素蒸気を処理することによってヒドロキシルラジカル蒸気を生成するステップと、
前記ヒドロキシルラジカル蒸気及び残りの過酸化水素蒸気を前記基板の前記作業表面に向けるステップは、前記炭素含有材料を化学的に改質させる、ステップと、
を含み、ここで、前記ヒドロキシルラジカル蒸気を前記基板の前記作業表面に向けるステップは、前記基板を、前記処理チャンバの所与の圧力に対して前記過酸化水素蒸気の凝縮温度よりも低い温度に維持することを包含する、方法。 - 前記過酸化水素蒸気を受け取るステップが、大気圧で前記過酸化水素蒸気を受け取ることを包含する、請求項1に記載の方法。
- 前記蒸気処理領域は、前記基板が前記処理チャンバ内に位置決めされるときに、前記基板上の前記処理チャンバ内の領域を包含する、請求項1に記載の方法。
- 前記蒸気処理領域が、紫外光を受光するように構成された石英導管を包含する、請求項1に記載の方法。
- 炭素含有材料の前記層が、アモルファスカーボン、フォトレジスト、スピンオンカーボン、及びエッチング後ポリマー残渣からなる群から選択される、請求項1に記載の方法。
- 前記過酸化水素蒸気を受け取るステップは、前記過酸化水素蒸気をキャリアガスと共に受け取ることを包含し、且つ、前記過酸化水素蒸気の濃度が1〜40%である、請求項1に記載の方法。
- 前記ヒドロキシルラジカル蒸気を前記基板の前記作業表面に向けるステップは、炭素含有材料の前記層を部分的に酸化するため、十分なヒドロキシルラジカル蒸気を向けることを包含する、請求項1に記載の方法。
- 基板を処理するための方法であって、
基板処理システムの処理チャンバ内に基板を位置決めするステップであって、前記基板は、前記基板の作業表面上に炭素含有材料の層を包含するステップと、
前記基板処理システムの蒸気処理領域内で過酸化水素蒸気を受け取るステップと、
前記基板処理システムの前記蒸気処理領域内にアルカン又はアルケンを受け取るステップと、
前記過酸化水素蒸気を処理すること、及び前記蒸気処理領域内の前記アルカン又はアルケンを処理することによって有機過酸化物を生成するステップと、
ヒドロキシルラジカル蒸気、前記有機過酸化物及び残存する過酸化水素蒸気を前記基板の作業表面に向けるステップであって、それによりヒドロキシルラジカル蒸気が炭素含有材料の前記層と接触するようにする、ステップと、
を含む、方法。 - 前記過酸化水素蒸気を紫外線放射に暴露するステップは、紫外線放射が前記基板の前記作業表面に向けられないように紫外線放射源を位置決めすることを包含する、請求項1に記載の方法。
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