KR960009031A - 질화 실리콘(Silicon Nitride)막의 UV-촉진된 건식 스트리핑 방법 - Google Patents

질화 실리콘(Silicon Nitride)막의 UV-촉진된 건식 스트리핑 방법 Download PDF

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KR960009031A
KR960009031A KR1019950025447A KR19950025447A KR960009031A KR 960009031 A KR960009031 A KR 960009031A KR 1019950025447 A KR1019950025447 A KR 1019950025447A KR 19950025447 A KR19950025447 A KR 19950025447A KR 960009031 A KR960009031 A KR 960009031A
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시. 그레이 데이비드
더블유. 버터바우 제프리
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베노 지. 샌드
에프에스아이 인터내셔날
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Abstract

본 발명은, 플라즈마 또는 플라즈마 유출물이 없는 건식반응 환경에서 질화실리콘 막을 빠르게 스트리핑(박리제거)하기 위한 UV-촉진된 처리공정에 관한 것이다. 상기 처리공정은, UV조사에 의해 광분해되어 원자상태의 불소를 생성할 수 있는 다원자 헝태 불소함유 가스와 UV조사에 기판웨이퍼를 동시에 노출시키는 것이 가능한 밀봉된 반응기 내에서 수행된다. 500Å/분을 초과하는 질화실리콘 스트리핑 속도를 UV-자극 불소이용 처리공정으로 쉽게 획득할 수 있으며, 이때 웨이퍼 전체온도를 300℃ 이하로 유리가 가능하다. 30 이상의 산화 실리콘에 대한 질화실리콘 에칭 선택성은 UV조사에 의해 광분해되어 원자형태의 염소 또는 브롬을 생성할 수 있는 염소 또는 브롬함유 가스가 불소함유 가스와 혼합하여 사용될시 필드산화물 및 패드산화물층의 존재하에 실리콘 LOCOS 차폐층을 스트리핑 하는 경우에 달성될 수 있다. 선택성 및 에칭속도는 UV 램프노출, 기판온도, 질소회석물의 첨가 및 광분해 가능한 염소 또는 브롬함유 가스를 통하여 조절된다. 본 발명에 따른 처리공정은, 플라즈마 유출물과 결합되어 튀겨진 오염물 및 하전된 입자들의 완전 제거를 포함하여 건식질화실리콘 스트리핑용 플라즈마-하류에칭 장치에 대한 많은 제한 문제에 역점을 두고 있다.

Description

질화 실리콘(Silicon Nitride)막의 UV-촉진된 건식 스트리핑 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제거될 PBL퇴적층을 가지는 실리콘 웨이퍼의 개략적인 단면도.
제2도는 낮은 (50℃)초기 웨이퍼온도수준에서, 질화실리콘(Si3N4), 열산화물 및 도핑된 붕인규산유리(BPSG)에 대한 UV-촉진된 3불화염소(ClF3) 에칭 속도를 나타내는 그래프.
제3도는 높은(150℃)초기 웨이퍼 온도수준에서, Si3N4, 열산화물 및 BPSG에 대한 UV-촉진된 에칭 속도를 나타내는 그래프.
제4도는 일정한 0.25ClF3분율 및 100℃ 초기 웨이퍼 온도에서, UV/ClF3에칭시 염산화물에 대한 질화실리콘의 에칭속도와 선택성에 대한 염소 첨가의 효과를 나타내는 그래프.

Claims (16)

  1. 기판으로부터 질화실리콘을 제거하는데 있어서, 자외선조사로 광분해 되어 원자상태의 불소를 생성할 수있는 불소 함유 가스로 이루어진 제1가스와 자외선조사로 광분해되어 원자상태의 염소나 브롬을 생산할 수 있는 염소함유가스 또는 브롬함유가스로 이루어진 제2가스 중에서, 적어도 하나의 제1가스와 적어도 하나의제2가스로 구성되어 있는 가스환경에 기판을 배치시키며, 가스 환경의 존재하에서 기판을 자외선에 노출시키는 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  2. 기판으로부터 질화실리콘을 제거하는데 있어서, 자외선조사로 광분해되어 원자상태의 불소를 생성할 수있는 불소함유 가스로 이루어진 제1가스 중에서, 적어도 하나의 제1가스로 구성되어 있는 가스환경에 기판을 배치시키며, 가스 환경의 존재하에서 기판을 자외선에 노출시키는 것으로 되어 있으며, 그때에, 180∼100nm범위에 걸친 기판표면에서의 자외선조사의 집적강도가 직어도 50mK/㎠이고, 자외선 조사전의 기판온도는 20-400℃ 범위 위이며, 상기 제1가스의 분압이 적어도 10토르인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  3. 제1항 또는 제2항에 있어서, 가스환경이 흐름가스 환경인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 제1가스가 불소, 불소할로겐간 화합물, 황의 불화물 및 그 불화크세논(XeF2)로 구성된 군에서 선택되는 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  5. 제1항 내지 제4항 중 어느 한 항에 있어서, 기관이 실리콘 또는 산화실리콘으로 구성된 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  6. 제1항 내지 제4항 중 어느 한 항에 있어서, 가스환경이 불활성가스, 바람직하게는 헬륨(He), 아르곤(Ar), 또는 질소(N2)를 추가로 포함하는 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  7. 제1항 내지 제6항 중 어느 한 항에 있어서, 기판은 기판표면의 적어도 일부분위에 기판에 보유시키기를 소망하는 산화실리콘 물질, 바람직하게는 도핑된 산화물막, 화학증착(CVD) 산화물막 또는 열산화물막을 포함하고 있는 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  8. 제1항 또는 제2항에 있어서, 에칭시키려는 질화실리콘 물질이 옥시질화실리콘, 폴리실리콘 및 산화실리콘으로 구성된 군으로부터 선택된 적어도 하나의 물질을 포함하는 복합퇴적물의 일부분인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  9. 제1항 내지 제8항 중 어느 한 항에 있어서, 질화실리콘이 실리콘 기판상에 대한 실리콘 부분산화(LOCOS) 처리용 차폐(마스크)층인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  10. 제1항 내지 제9항 중 어느 한 항에 있어서, 제1가스의 분압이 10토르-760토르 범위인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  11. 제1항 내지 제10항 중 어느 한 항에 있어서, 자외선 조사전의 기판온도가 적어도 150℃인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  12. 제1항 내지 제11항 중 어느 한 항에 있어서, 제1가스가 불소(F2), 3불화염소(ClF3) 또는 3불화브롬(BrF3)이고, 가스환경이 제2가스로 염소를 함유하고, 240-400nm 범위에 걸친 기판 표면에 대한 자외선조사의 집적강도가 적어도 200mW/㎠이고, 제1가스의 압력이 적어도 20토르이며, 보다 바람직하게는 적어도 50토르이고, 제1 및 제2가스가 2 대 1-1 대 2의 압력비로 존재하고, 자외선 조사전의 기판온도가 150∼250℃인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  13. 제1항 내지 제12항 중 어느 한 항에 있어서, 기판은 실리콘웨이퍼이며, (a)상기 배치시키는 단계전에 자외선 투명창을 가지고 있는 처리실을 낮은 기본압력까지 감압시키고, 실리콘웨이퍼 기판을 처리실내에 도입하는 단계, (b)상기 처리실내로 상기 가스환경을 도입하는 것에 의해서, 상기 배치단계를 수행하는 단계, (c)상기 처리실내에 있는 가스환경 및 기판을 상기 자외선 투명창을 통해 자외선에 조사시키는 것에 의해서, 상기 노출단계를 수행하는 단계, (d)처리실을 감압시키는 단계 및 (e)기판을 처리실로부터 제거하는 단계를 추가로 포함하는 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  14. 제1항 내지 제13항 중 어느 한 항에 있어서, 가스환경에 플라즈마 생성물이 실질적으로 없는 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  15. 제1항 내지 제13항 중 어느 한 항에 있어서, 배치단계가 상기 기판을 포함하는 처리실내로 제1가스 및 제2가스를 도입하는 것으로 되어 있으며, 상기 처리실내에 상기 가스를 도입하기 전에 플라즈마 생성원으로 상기 가스를 자극하는 단계를 추가로 포함하는 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
  16. 제1항 내지 제15항 중 어느 한 항에 있어서, 질화실리콘 제거속도가 적어도 100Å/분 보다 바람직하게는 500Å/분인 것을 특징으로 하는 질화 실리콘막의 UV-촉진된 건식 스트리핑 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950025447A 1994-08-18 1995-08-18 질화 실리콘막의 uv-촉진된 건식 스트리핑 방법 KR100255960B1 (ko)

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