JPS58103168A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58103168A
JPS58103168A JP56204070A JP20407081A JPS58103168A JP S58103168 A JPS58103168 A JP S58103168A JP 56204070 A JP56204070 A JP 56204070A JP 20407081 A JP20407081 A JP 20407081A JP S58103168 A JPS58103168 A JP S58103168A
Authority
JP
Japan
Prior art keywords
layer
thin layer
thin
semiconductor device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56204070A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6364057B2 (enExample
Inventor
Toru Takeuchi
竹内　透
Ichiro Fujita
藤田　一朗
Toshihiko Ono
敏彦 小野
Kiyoshi Watabe
渡部　潔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56204070A priority Critical patent/JPS58103168A/ja
Priority to EP82306670A priority patent/EP0082012B1/en
Priority to DE8282306670T priority patent/DE3278146D1/de
Priority to IE2988/82A priority patent/IE54310B1/en
Publication of JPS58103168A publication Critical patent/JPS58103168A/ja
Publication of JPS6364057B2 publication Critical patent/JPS6364057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/425—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP56204070A 1981-12-16 1981-12-16 半導体装置 Granted JPS58103168A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56204070A JPS58103168A (ja) 1981-12-16 1981-12-16 半導体装置
EP82306670A EP0082012B1 (en) 1981-12-16 1982-12-14 Multilayer electrode of a semiconductor device
DE8282306670T DE3278146D1 (en) 1981-12-16 1982-12-14 Multilayer electrode of a semiconductor device
IE2988/82A IE54310B1 (en) 1981-12-16 1982-12-16 Multilayer electrode of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204070A JPS58103168A (ja) 1981-12-16 1981-12-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS58103168A true JPS58103168A (ja) 1983-06-20
JPS6364057B2 JPS6364057B2 (enExample) 1988-12-09

Family

ID=16484261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56204070A Granted JPS58103168A (ja) 1981-12-16 1981-12-16 半導体装置

Country Status (4)

Country Link
EP (1) EP0082012B1 (enExample)
JP (1) JPS58103168A (enExample)
DE (1) DE3278146D1 (enExample)
IE (1) IE54310B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164491B (en) * 1984-09-14 1988-04-07 Stc Plc Semiconductor devices
JPH0611076B2 (ja) * 1985-10-08 1994-02-09 三菱電機株式会社 半導体装置の製造方法
EP0249256B1 (en) * 1986-04-14 1992-01-22 Koninklijke Philips Electronics N.V. A semiconductor device with an aluminium interconnect layer containing a small percentage of vanadium
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
US4987562A (en) * 1987-08-28 1991-01-22 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
GB2214709A (en) * 1988-01-20 1989-09-06 Philips Nv A method of enabling connection to a substructure forming part of an electronic device
SG118117A1 (en) * 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
SG116443A1 (en) 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
JP4926329B2 (ja) 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444866A (en) * 1977-09-16 1979-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3939047A (en) * 1971-11-15 1976-02-17 Nippon Electric Co., Ltd. Method for fabricating electrode structure for a semiconductor device having a shallow junction
US3881971A (en) * 1972-11-29 1975-05-06 Ibm Method for fabricating aluminum interconnection metallurgy system for silicon devices
US3918149A (en) * 1974-06-28 1975-11-11 Intel Corp Al/Si metallization process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444866A (en) * 1977-09-16 1979-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
JPS6364057B2 (enExample) 1988-12-09
EP0082012A3 (en) 1985-06-05
IE822988L (en) 1983-06-16
DE3278146D1 (en) 1988-03-31
IE54310B1 (en) 1989-08-16
EP0082012B1 (en) 1988-02-24
EP0082012A2 (en) 1983-06-22

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