IE54310B1 - Multilayer electrode of a semiconductor device - Google Patents

Multilayer electrode of a semiconductor device

Info

Publication number
IE54310B1
IE54310B1 IE2988/82A IE298882A IE54310B1 IE 54310 B1 IE54310 B1 IE 54310B1 IE 2988/82 A IE2988/82 A IE 2988/82A IE 298882 A IE298882 A IE 298882A IE 54310 B1 IE54310 B1 IE 54310B1
Authority
IE
Ireland
Prior art keywords
layer
silicon
multilayer electrode
aluminium
multilayer
Prior art date
Application number
IE2988/82A
Other languages
English (en)
Other versions
IE822988L (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of IE822988L publication Critical patent/IE822988L/xx
Publication of IE54310B1 publication Critical patent/IE54310B1/en

Links

Classifications

    • H10W20/425—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
IE2988/82A 1981-12-16 1982-12-16 Multilayer electrode of a semiconductor device IE54310B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204070A JPS58103168A (ja) 1981-12-16 1981-12-16 半導体装置

Publications (2)

Publication Number Publication Date
IE822988L IE822988L (en) 1983-06-16
IE54310B1 true IE54310B1 (en) 1989-08-16

Family

ID=16484261

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2988/82A IE54310B1 (en) 1981-12-16 1982-12-16 Multilayer electrode of a semiconductor device

Country Status (4)

Country Link
EP (1) EP0082012B1 (enExample)
JP (1) JPS58103168A (enExample)
DE (1) DE3278146D1 (enExample)
IE (1) IE54310B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164491B (en) * 1984-09-14 1988-04-07 Stc Plc Semiconductor devices
JPH0611076B2 (ja) * 1985-10-08 1994-02-09 三菱電機株式会社 半導体装置の製造方法
EP0249256B1 (en) * 1986-04-14 1992-01-22 Koninklijke Philips Electronics N.V. A semiconductor device with an aluminium interconnect layer containing a small percentage of vanadium
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
US4987562A (en) * 1987-08-28 1991-01-22 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
GB2214709A (en) * 1988-01-20 1989-09-06 Philips Nv A method of enabling connection to a substructure forming part of an electronic device
SG118117A1 (en) * 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
SG116443A1 (en) 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
JP4926329B2 (ja) 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3939047A (en) * 1971-11-15 1976-02-17 Nippon Electric Co., Ltd. Method for fabricating electrode structure for a semiconductor device having a shallow junction
US3881971A (en) * 1972-11-29 1975-05-06 Ibm Method for fabricating aluminum interconnection metallurgy system for silicon devices
US3918149A (en) * 1974-06-28 1975-11-11 Intel Corp Al/Si metallization process
JPS5444866A (en) * 1977-09-16 1979-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
JPS6364057B2 (enExample) 1988-12-09
EP0082012A3 (en) 1985-06-05
IE822988L (en) 1983-06-16
DE3278146D1 (en) 1988-03-31
EP0082012B1 (en) 1988-02-24
JPS58103168A (ja) 1983-06-20
EP0082012A2 (en) 1983-06-22

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Legal Events

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