JPS5790940A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5790940A
JPS5790940A JP55166930A JP16693080A JPS5790940A JP S5790940 A JPS5790940 A JP S5790940A JP 55166930 A JP55166930 A JP 55166930A JP 16693080 A JP16693080 A JP 16693080A JP S5790940 A JPS5790940 A JP S5790940A
Authority
JP
Japan
Prior art keywords
film
section
films
gate electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55166930A
Other languages
English (en)
Japanese (ja)
Other versions
JPH028451B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55166930A priority Critical patent/JPS5790940A/ja
Publication of JPS5790940A publication Critical patent/JPS5790940A/ja
Publication of JPH028451B2 publication Critical patent/JPH028451B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP55166930A 1980-11-27 1980-11-27 Manufacture of semiconductor device Granted JPS5790940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55166930A JPS5790940A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166930A JPS5790940A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61253219A Division JPS6297331A (ja) 1986-10-24 1986-10-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5790940A true JPS5790940A (en) 1982-06-05
JPH028451B2 JPH028451B2 (enrdf_load_stackoverflow) 1990-02-23

Family

ID=15840289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55166930A Granted JPS5790940A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5790940A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599942A (ja) * 1982-07-08 1984-01-19 Mitsubishi Electric Corp 配線パタ−ン形成法
JPH01181443A (ja) * 1988-01-08 1989-07-19 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599942A (ja) * 1982-07-08 1984-01-19 Mitsubishi Electric Corp 配線パタ−ン形成法
JPH01181443A (ja) * 1988-01-08 1989-07-19 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH028451B2 (enrdf_load_stackoverflow) 1990-02-23

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