JPS5789286A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS5789286A JPS5789286A JP16612280A JP16612280A JPS5789286A JP S5789286 A JPS5789286 A JP S5789286A JP 16612280 A JP16612280 A JP 16612280A JP 16612280 A JP16612280 A JP 16612280A JP S5789286 A JPS5789286 A JP S5789286A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- stripe
- clad layer
- deffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16612280A JPS5789286A (en) | 1980-11-25 | 1980-11-25 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16612280A JPS5789286A (en) | 1980-11-25 | 1980-11-25 | Semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5789286A true JPS5789286A (en) | 1982-06-03 |
Family
ID=15825432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16612280A Pending JPS5789286A (en) | 1980-11-25 | 1980-11-25 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789286A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59147479A (ja) * | 1983-02-09 | 1984-08-23 | Sharp Corp | 半導体レ−ザ素子 |
US4810670A (en) * | 1986-03-06 | 1989-03-07 | Kabushiki Kaisha Toshiba | Method of manufacturing an embedded type semiconductor laser |
JPH06164058A (ja) * | 1992-11-25 | 1994-06-10 | Rohm Co Ltd | 半導体レーザおよびその製法 |
EP0633636A1 (en) * | 1993-07-09 | 1995-01-11 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5158879A (ja) * | 1974-11-19 | 1976-05-22 | Nippon Telegraph & Telephone | |
JPS5290280A (en) * | 1976-01-22 | 1977-07-29 | Nec Corp | Semiconductor laser element |
JPS5518037A (en) * | 1978-07-24 | 1980-02-07 | Nec Corp | Semiconductor laser |
-
1980
- 1980-11-25 JP JP16612280A patent/JPS5789286A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5158879A (ja) * | 1974-11-19 | 1976-05-22 | Nippon Telegraph & Telephone | |
JPS5290280A (en) * | 1976-01-22 | 1977-07-29 | Nec Corp | Semiconductor laser element |
JPS5518037A (en) * | 1978-07-24 | 1980-02-07 | Nec Corp | Semiconductor laser |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59147479A (ja) * | 1983-02-09 | 1984-08-23 | Sharp Corp | 半導体レ−ザ素子 |
JPH0252868B2 (ja) * | 1983-02-09 | 1990-11-14 | Sharp Kk | |
US4810670A (en) * | 1986-03-06 | 1989-03-07 | Kabushiki Kaisha Toshiba | Method of manufacturing an embedded type semiconductor laser |
JPH06164058A (ja) * | 1992-11-25 | 1994-06-10 | Rohm Co Ltd | 半導体レーザおよびその製法 |
EP0633636A1 (en) * | 1993-07-09 | 1995-01-11 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
US5408488A (en) * | 1993-07-09 | 1995-04-18 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
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