KR900011085A - InP/GaInAsp 레이저 다이오드 및 그의 제조방법 - Google Patents

InP/GaInAsp 레이저 다이오드 및 그의 제조방법 Download PDF

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Publication number
KR900011085A
KR900011085A KR1019890018779A KR890018779A KR900011085A KR 900011085 A KR900011085 A KR 900011085A KR 1019890018779 A KR1019890018779 A KR 1019890018779A KR 890018779 A KR890018779 A KR 890018779A KR 900011085 A KR900011085 A KR 900011085A
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South Korea
Prior art keywords
layer
inp
gainasp
type
laser diode
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KR1019890018779A
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English (en)
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KR940007604B1 (ko
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빌모스 라코빅스
오든 렌드바이
폴탄 라바디
이스트반 하버메이어
Original Assignee
원본미기재
마그야르 투도마뇨스 아카데미아 무스짜키 피찌카이 쿠타토 인테쩨테
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Publication of KR900011085A publication Critical patent/KR900011085A/ko
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Publication of KR940007604B1 publication Critical patent/KR940007604B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음

Description

InP/GaInAsP 레이저 다이오드 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 레이저 다이오드의 구조를 나타낸 사시도, 제2도는 본 발명에 따른 레이저 다이오드의 제조과정을 나타낸 제조과정도이다.

Claims (1)

  1. InP 기판 위로 활성 매복층이 설치되고 이중으로 채널된 p-n 접합을 포함하는 이중헤테로 구조의 레이저 다이오드로서, 두 개의 평행한 채널(9), n 형 InP 층과 P형 InP층에 의해 사방이 한정되어 더 넓은 매복밴드와 낮은 굴절률을 가지며 채널(9) 사이에 있는 GaInAsP 매복층(3a), n-형 InP 버퍼층(2), 좁은 간격을 가지며 평면부 위와 채널(9)의 하부에 놓이는 또하나의 GaInAsP 층(3), n-형층(4), n-형 전류제한층(5), InP 내장층(6), p-형 GaInAsP 접촉층(7), p-측 접촉층(7) 위를 덮는 Au/Au-Zu 금속층(8), n-측과 직접 접촉하는 Au-Ge/Ni/Au 금속층(8b)이 방위된 기판(1)위로 구성되는 것을 특징으로 하는 InP/GaInAsP 레이저 다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890018779A 1988-12-15 1989-12-15 Inp/GaInAsp 레이저 다이오드 및 그의 제조방법 KR940007604B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
HU886432A HU206565B (en) 1988-12-15 1988-12-15 Inp/gainasp laser diode of burried active layer, having built-in blocking layer, of double heterostructure and method for making said laser diode by one-stage liquid epitaxial procedure
HU6432/88 1988-12-15

Publications (2)

Publication Number Publication Date
KR900011085A true KR900011085A (ko) 1990-07-11
KR940007604B1 KR940007604B1 (ko) 1994-08-20

Family

ID=10971624

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018779A KR940007604B1 (ko) 1988-12-15 1989-12-15 Inp/GaInAsp 레이저 다이오드 및 그의 제조방법

Country Status (7)

Country Link
EP (1) EP0373637A3 (ko)
JP (1) JPH03136289A (ko)
KR (1) KR940007604B1 (ko)
CA (1) CA2005555A1 (ko)
DD (1) DD290078A5 (ko)
HU (1) HU206565B (ko)
IL (1) IL92701A0 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341001A (en) * 1992-02-13 1994-08-23 Matsushita Electric Industrial Co., Ltd. Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
JPH07288361A (ja) * 1994-04-18 1995-10-31 Nec Kansai Ltd 半導体レーザ及びその製造方法
JP2699888B2 (ja) * 1994-09-20 1998-01-19 日本電気株式会社 埋め込み型ｐ型基板半導体レーザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864084A (ja) * 1981-10-13 1983-04-16 Nec Corp 半導体レ−ザ
US4525841A (en) * 1981-10-19 1985-06-25 Nippon Electric Co., Ltd. Double channel planar buried heterostructure laser
JPS58131785A (ja) * 1982-01-29 1983-08-05 Nec Corp 単一軸モ−ド発振半導体レ−ザ
JPS60137087A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体レ−ザ装置
JPS62268182A (ja) * 1986-05-15 1987-11-20 Canon Inc 半導体レ−ザ装置

Also Published As

Publication number Publication date
EP0373637A3 (en) 1990-12-27
JPH03136289A (ja) 1991-06-11
CA2005555A1 (en) 1990-06-15
HUT55924A (en) 1991-06-28
HU206565B (en) 1992-11-30
IL92701A0 (en) 1990-09-17
DD290078A5 (de) 1991-05-16
KR940007604B1 (ko) 1994-08-20
EP0373637A2 (en) 1990-06-20

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