JPS5783047A - Polycrystalline semiconductor resistor - Google Patents
Polycrystalline semiconductor resistorInfo
- Publication number
- JPS5783047A JPS5783047A JP15860980A JP15860980A JPS5783047A JP S5783047 A JPS5783047 A JP S5783047A JP 15860980 A JP15860980 A JP 15860980A JP 15860980 A JP15860980 A JP 15860980A JP S5783047 A JPS5783047 A JP S5783047A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline material
- resistor
- grain
- polycrystalline
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910001069 Ti alloy Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15860980A JPS5783047A (en) | 1980-11-10 | 1980-11-10 | Polycrystalline semiconductor resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15860980A JPS5783047A (en) | 1980-11-10 | 1980-11-10 | Polycrystalline semiconductor resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5783047A true JPS5783047A (en) | 1982-05-24 |
JPH0154869B2 JPH0154869B2 (ja) | 1989-11-21 |
Family
ID=15675439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15860980A Granted JPS5783047A (en) | 1980-11-10 | 1980-11-10 | Polycrystalline semiconductor resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5783047A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6343379A (ja) * | 1986-08-08 | 1988-02-24 | Nippon Denso Co Ltd | 圧力測定器 |
WO2009000136A1 (en) * | 2007-06-22 | 2008-12-31 | The Hong Kong University Of Science And Technology | Polycrystalline silicon thin film transistors with bridged-grain structures |
WO2013078641A1 (zh) * | 2011-11-30 | 2013-06-06 | 广东中显科技有限公司 | 搭桥晶粒多晶硅薄膜晶体管及其制造方法 |
CN103779420A (zh) * | 2011-08-23 | 2014-05-07 | 广东中显科技有限公司 | 一种具有搭桥晶粒结构的多晶硅薄膜晶体管 |
-
1980
- 1980-11-10 JP JP15860980A patent/JPS5783047A/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6343379A (ja) * | 1986-08-08 | 1988-02-24 | Nippon Denso Co Ltd | 圧力測定器 |
WO2009000136A1 (en) * | 2007-06-22 | 2008-12-31 | The Hong Kong University Of Science And Technology | Polycrystalline silicon thin film transistors with bridged-grain structures |
JP2010531053A (ja) * | 2007-06-22 | 2010-09-16 | ザ・ホンコン・ユニバーシティー・オブ・サイエンス・アンド・テクノロジー | 架橋粒子構造を有する多結晶シリコン薄膜トランジスタ |
US8426865B2 (en) | 2007-06-22 | 2013-04-23 | The Hong Kong University Of Science And Technology | Polycrystalline silicon thin film transistors with bridged-grain structures |
KR101426982B1 (ko) * | 2007-06-22 | 2014-08-06 | 더 홍콩 유니버시티 오브 사이언스 앤드 테크놀러지 | 브리징된 그레인 구조들을 갖는 다결정 실리콘 박막 트래지스터들 |
CN103779420A (zh) * | 2011-08-23 | 2014-05-07 | 广东中显科技有限公司 | 一种具有搭桥晶粒结构的多晶硅薄膜晶体管 |
WO2013078641A1 (zh) * | 2011-11-30 | 2013-06-06 | 广东中显科技有限公司 | 搭桥晶粒多晶硅薄膜晶体管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0154869B2 (ja) | 1989-11-21 |
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