JPS5771806A - Forming method of nitrided film - Google Patents

Forming method of nitrided film

Info

Publication number
JPS5771806A
JPS5771806A JP14520280A JP14520280A JPS5771806A JP S5771806 A JPS5771806 A JP S5771806A JP 14520280 A JP14520280 A JP 14520280A JP 14520280 A JP14520280 A JP 14520280A JP S5771806 A JPS5771806 A JP S5771806A
Authority
JP
Japan
Prior art keywords
gas
oven
nitrided film
compound
nitrogen compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14520280A
Other languages
English (en)
Inventor
Yasuaki Hokari
Toshio Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14520280A priority Critical patent/JPS5771806A/ja
Publication of JPS5771806A publication Critical patent/JPS5771806A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP14520280A 1980-10-17 1980-10-17 Forming method of nitrided film Pending JPS5771806A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14520280A JPS5771806A (en) 1980-10-17 1980-10-17 Forming method of nitrided film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14520280A JPS5771806A (en) 1980-10-17 1980-10-17 Forming method of nitrided film

Publications (1)

Publication Number Publication Date
JPS5771806A true JPS5771806A (en) 1982-05-04

Family

ID=15379763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14520280A Pending JPS5771806A (en) 1980-10-17 1980-10-17 Forming method of nitrided film

Country Status (1)

Country Link
JP (1) JPS5771806A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63162512A (ja) * 1986-12-26 1988-07-06 Toshiba Ceramics Co Ltd 窒化ケイ素の製造方法
JP2003077913A (ja) * 2001-08-31 2003-03-14 Tokyo Electron Ltd 被処理体の窒化方法及び半導体素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269280A (en) * 1975-12-05 1977-06-08 Matsushita Electronics Corp Production of semiconductor non-volatile method
JPS54163679A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Semiconductor device
JPS55156355A (en) * 1979-05-24 1980-12-05 Fujitsu Ltd Capacitor usable for semiconductor device
JPS56100475A (en) * 1980-01-16 1981-08-12 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269280A (en) * 1975-12-05 1977-06-08 Matsushita Electronics Corp Production of semiconductor non-volatile method
JPS54163679A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Semiconductor device
JPS55156355A (en) * 1979-05-24 1980-12-05 Fujitsu Ltd Capacitor usable for semiconductor device
JPS56100475A (en) * 1980-01-16 1981-08-12 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63162512A (ja) * 1986-12-26 1988-07-06 Toshiba Ceramics Co Ltd 窒化ケイ素の製造方法
JP2003077913A (ja) * 2001-08-31 2003-03-14 Tokyo Electron Ltd 被処理体の窒化方法及び半導体素子
JP4506056B2 (ja) * 2001-08-31 2010-07-21 東京エレクトロン株式会社 被処理体の窒化方法及び半導体素子

Similar Documents

Publication Publication Date Title
JPS5662328A (en) Manufacturing of insulation membrane and insulation membrane-semiconductor interface
JPS5771806A (en) Forming method of nitrided film
JPS55113335A (en) Manufacture of semiconductor device
JPS5522862A (en) Manufacturing method for silicon oxidized film
JPS5423379A (en) Formation of insulating film on semiconductor surface
JPS56162841A (en) Forming method for insulating film of compound semiconductor
JPS5771807A (en) Forming method of nitrided film
JPS57115823A (en) Manufacture of amorphous semiconductor film
JPS5513955A (en) Method for forming thin insulation film
JPS5398779A (en) Manufacture for silicon oxide film
JPS558036A (en) Electrode formation
JPS52147992A (en) Manufacture of semiconductor device
JPS52139373A (en) Treating method for compound semiconductor
JPS5376758A (en) Plasma etching method
JPS5372572A (en) Manufacturing device for semiconductor device
JPS5754332A (en) Forming method for thermonitride silicon film
JPS5354972A (en) Production of semiconductor device
JPS57148344A (en) Manufacturing equipment for semiconductor
JPS57134936A (en) Forming method of insulation film on compound semiconductor
JPS53125760A (en) Manufacture for gas discharging panel
JPS53148277A (en) Controlling method of goping gas in vapor phase growth of semiconductor
JPS5635481A (en) Nitrification of molybdenum
JPS5421264A (en) Forming method of semiconductor surface magnetization
JPS5423378A (en) Formation method of insulating film on semiconductor surface
JPS53105975A (en) Heat treatment for silicon oxide film