JPS5753977A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5753977A
JPS5753977A JP55129783A JP12978380A JPS5753977A JP S5753977 A JPS5753977 A JP S5753977A JP 55129783 A JP55129783 A JP 55129783A JP 12978380 A JP12978380 A JP 12978380A JP S5753977 A JPS5753977 A JP S5753977A
Authority
JP
Japan
Prior art keywords
collector
base
layer
emitter
dopant concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55129783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0123950B2 (enExample
Inventor
Tamikazu Hosoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP55129783A priority Critical patent/JPS5753977A/ja
Publication of JPS5753977A publication Critical patent/JPS5753977A/ja
Publication of JPH0123950B2 publication Critical patent/JPH0123950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP55129783A 1980-09-17 1980-09-17 Transistor Granted JPS5753977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55129783A JPS5753977A (en) 1980-09-17 1980-09-17 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55129783A JPS5753977A (en) 1980-09-17 1980-09-17 Transistor

Publications (2)

Publication Number Publication Date
JPS5753977A true JPS5753977A (en) 1982-03-31
JPH0123950B2 JPH0123950B2 (enExample) 1989-05-09

Family

ID=15018107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55129783A Granted JPS5753977A (en) 1980-09-17 1980-09-17 Transistor

Country Status (1)

Country Link
JP (1) JPS5753977A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007531292A (ja) * 2004-04-02 2007-11-01 プレマ セミコンダクター ゲーエムベーハー バイポーラトランジスタおよびバイポーラトランジスタの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54109780A (en) * 1978-01-18 1979-08-28 Philips Nv Semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54109780A (en) * 1978-01-18 1979-08-28 Philips Nv Semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007531292A (ja) * 2004-04-02 2007-11-01 プレマ セミコンダクター ゲーエムベーハー バイポーラトランジスタおよびバイポーラトランジスタの製造方法

Also Published As

Publication number Publication date
JPH0123950B2 (enExample) 1989-05-09

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