JPS5752144A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5752144A
JPS5752144A JP56110631A JP11063181A JPS5752144A JP S5752144 A JPS5752144 A JP S5752144A JP 56110631 A JP56110631 A JP 56110631A JP 11063181 A JP11063181 A JP 11063181A JP S5752144 A JPS5752144 A JP S5752144A
Authority
JP
Japan
Prior art keywords
major surface
semiconductor device
adhesive layer
metal layer
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56110631A
Other languages
English (en)
Other versions
JPS6322458B2 (ja
Inventor
Petorasu Teodora Eberuharudasu
Yohannu Machiisu Uie Antoniusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5752144A publication Critical patent/JPS5752144A/ja
Publication of JPS6322458B2 publication Critical patent/JPS6322458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H01L23/4926—Bases or plates or solder therefor characterised by the materials the materials containing semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56110631A 1980-07-18 1981-07-15 Semiconductor device Granted JPS5752144A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8004139A NL8004139A (nl) 1980-07-18 1980-07-18 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS5752144A true JPS5752144A (en) 1982-03-27
JPS6322458B2 JPS6322458B2 (ja) 1988-05-12

Family

ID=19835640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56110631A Granted JPS5752144A (en) 1980-07-18 1981-07-15 Semiconductor device

Country Status (8)

Country Link
US (1) US4476483A (ja)
JP (1) JPS5752144A (ja)
CA (1) CA1176764A (ja)
DE (1) DE3124879A1 (ja)
FR (1) FR2487123B1 (ja)
GB (1) GB2080028B (ja)
IE (1) IE51997B1 (ja)
NL (1) NL8004139A (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3335184A1 (de) * 1983-09-28 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbausteinen
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
DE3823347A1 (de) * 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
JP2731040B2 (ja) * 1991-02-05 1998-03-25 三菱電機株式会社 半導体装置の製造方法
US5441914A (en) * 1994-05-02 1995-08-15 Motorola Inc. Method of forming conductive interconnect structure
US5998237A (en) * 1996-09-17 1999-12-07 Enthone-Omi, Inc. Method for adding layers to a PWB which yields high levels of copper to dielectric adhesion
US7635635B2 (en) * 2006-04-06 2009-12-22 Fairchild Semiconductor Corporation Method for bonding a semiconductor substrate to a metal substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514111C3 (de) * 1965-01-29 1973-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Verlotung von Halbleiterscheiben mit ihren Anschluß elektroden
GB1039257A (en) * 1965-05-21 1966-08-17 Standard Telephones Cables Ltd Semiconductor devices
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
DE1806980A1 (de) * 1967-11-15 1969-06-19 Fairchild Camera Instr Co Halbleiter-Bauelement
DE1614668B2 (de) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Halbleiter-Anordnung mit Großflächigen, gut lötbaren Kontaktelektroden und Verfahren zu ihrer Herstellung
DE1803489A1 (de) * 1968-10-17 1970-05-27 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes
FR2085358A1 (ja) * 1970-04-13 1971-12-24 Comp Generale Electricite
DE2031078A1 (en) * 1970-06-24 1971-12-30 Licentia Gmbh Semiconductor diode - with migration - inhibiting intermediate contact layers
DE2109508C2 (de) * 1971-03-01 1985-04-04 General Electric Co., Schenectady, N.Y. Thyristor
DE7216704U (de) * 1971-05-03 1972-08-10 Motorola Inc Halbleiteranordnung mit flachliegender grenzschicht
US4106051A (en) * 1972-11-08 1978-08-08 Ferranti Limited Semiconductor devices
DE2930779C2 (de) * 1978-07-28 1983-08-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung
US4251287A (en) * 1979-10-01 1981-02-17 The University Of Delaware Amorphous semiconductor solar cell

Also Published As

Publication number Publication date
DE3124879C2 (ja) 1991-01-31
IE51997B1 (en) 1987-05-13
GB2080028A (en) 1982-01-27
FR2487123A1 (fr) 1982-01-22
JPS6322458B2 (ja) 1988-05-12
DE3124879A1 (de) 1982-03-18
NL8004139A (nl) 1982-02-16
IE811621L (en) 1982-01-18
US4476483A (en) 1984-10-09
FR2487123B1 (fr) 1986-06-20
GB2080028B (en) 1984-03-28
CA1176764A (en) 1984-10-23

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