FR2399130A1 - Dispositif semi-conducteur photovoltaique - Google Patents

Dispositif semi-conducteur photovoltaique

Info

Publication number
FR2399130A1
FR2399130A1 FR7821223A FR7821223A FR2399130A1 FR 2399130 A1 FR2399130 A1 FR 2399130A1 FR 7821223 A FR7821223 A FR 7821223A FR 7821223 A FR7821223 A FR 7821223A FR 2399130 A1 FR2399130 A1 FR 2399130A1
Authority
FR
France
Prior art keywords
layer
photovoltaic device
semiconductor photovoltaic
insulating layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7821223A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2399130A1 publication Critical patent/FR2399130A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

Dispositif semi-conducteur photovoltaïque comprenant un corps de silicium amorphe hydrogéné, caractérisé en ce qu'il comporte : une couche d'un matériau électriquement isolant sur une surface de ce corps, cette couche isolante ayant une épaisseur telle que des porteurs de charge soient capables de traverser la couche par effet tunnel, et une couche métallique sur une surface de la couche isolante opposée au corps.
FR7821223A 1977-07-28 1978-07-18 Dispositif semi-conducteur photovoltaique Pending FR2399130A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/819,936 US4117506A (en) 1977-07-28 1977-07-28 Amorphous silicon photovoltaic device having an insulating layer

Publications (1)

Publication Number Publication Date
FR2399130A1 true FR2399130A1 (fr) 1979-02-23

Family

ID=25229482

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7821223A Pending FR2399130A1 (fr) 1977-07-28 1978-07-18 Dispositif semi-conducteur photovoltaique

Country Status (6)

Country Link
US (1) US4117506A (fr)
JP (1) JPS5425187A (fr)
CA (1) CA1104700A (fr)
DE (1) DE2826752A1 (fr)
FR (1) FR2399130A1 (fr)
GB (1) GB1602007A (fr)

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US5543634A (en) * 1977-12-05 1996-08-06 Plasma Physics Corp. Method of forming semiconductor materials and barriers
US5073804A (en) * 1977-12-05 1991-12-17 Plasma Physics Corp. Method of forming semiconductor materials and barriers
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
US4320249A (en) * 1979-08-13 1982-03-16 Shunpei Yamazaki Heterojunction type semiconductor photoelectric conversion device
US4291318A (en) * 1979-12-03 1981-09-22 Exxon Research & Engineering Co. Amorphous silicon MIS device
JPS5693375A (en) * 1979-12-26 1981-07-28 Shunpei Yamazaki Photoelectric conversion device
DE3001463C2 (de) * 1980-01-17 1984-06-20 Asahi Kasei Kogyo K.K., Osaka Halbleiterphotoelement
US4358782A (en) * 1980-01-17 1982-11-09 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor device
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US4289602A (en) * 1980-05-15 1981-09-15 Exxon Research And Engineering Co. Electrochemical oxidation of amorphous silicon
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE34658E (en) * 1980-06-30 1994-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device of non-single crystal-structure
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
JPS57130482A (en) * 1981-02-05 1982-08-12 Semiconductor Energy Lab Co Ltd Mis type photoelectric transducer
JPS57130483A (en) * 1981-02-05 1982-08-12 Semiconductor Energy Lab Co Ltd Mis type photoelectric transducer
US4398054A (en) * 1982-04-12 1983-08-09 Chevron Research Company Compensated amorphous silicon solar cell incorporating an insulating layer
US4415760A (en) * 1982-04-12 1983-11-15 Chevron Research Company Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
USRE38727E1 (en) * 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US4492743A (en) * 1982-10-15 1985-01-08 Standard Oil Company (Indiana) Multilayer photoelectrodes and photovoltaic cells
US4598306A (en) * 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
JPH0673375B2 (ja) * 1984-03-19 1994-09-14 富士通株式会社 半導体装置の製造方法
JPH0636432B2 (ja) * 1984-03-21 1994-05-11 株式会社半導体エネルギー研究所 光電変換半導体装置
JPS6057616A (ja) * 1984-03-21 1985-04-03 Shunpei Yamazaki 半導体装置作製方法
JPS6057680A (ja) * 1984-03-21 1985-04-03 Shunpei Yamazaki 半導体装置
JPS6057678A (ja) * 1984-03-21 1985-04-03 Shunpei Yamazaki 螢光灯電池
JPS60100483A (ja) * 1984-04-13 1985-06-04 Shunpei Yamazaki 光起電力発生装置
JPS59229879A (ja) * 1984-04-28 1984-12-24 Shunpei Yamazaki 光電変換装置
EP0190855A3 (fr) * 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Dispositif photovoltaique insensible aux défauts de faible résistance
DE3516117A1 (de) * 1985-05-04 1986-11-06 Telefunken electronic GmbH, 7100 Heilbronn Solarzelle
CA1321660C (fr) * 1985-11-05 1993-08-24 Hideo Yamagishi Dispositif a semiconducteur amorphe a couche intermediaire a grande resistivite ou fortement dopee
EP0283699B1 (fr) * 1987-03-23 1994-06-15 Hitachi, Ltd. Dispositif de conversion photo-électrique
JP2713419B2 (ja) * 1988-04-14 1998-02-16 松下電器産業株式会社 光二次電池
JP2723608B2 (ja) * 1989-04-28 1998-03-09 松下電器産業株式会社 太陽電池
JPH0462979A (ja) * 1990-07-02 1992-02-27 Matsushita Electric Ind Co Ltd 水素化アモルファスシリコンを用いた電気素子
JP2892782B2 (ja) * 1990-07-02 1999-05-17 松下電器産業株式会社 水素化アモルファスシリコンを用いた電気素子
US5344499A (en) * 1990-07-02 1994-09-06 Matsushita Electric Industrial Co., Ltd. Electric device of hydrogenated amorphous silicon and method of manufacture
EP0465026B1 (fr) * 1990-07-02 1996-10-30 Matsushita Electric Industrial Co., Ltd. Méthode de fabrication d'un dispositif photo-électrique en silicium amorphe hydrogéné
AUPO585797A0 (en) * 1997-03-25 1997-04-24 Memtec America Corporation Improved electrochemical cell
US6057587A (en) * 1997-08-28 2000-05-02 Vlsi Technology, Inc. Semiconductor device with anti-reflective structure
JP3861154B2 (ja) * 2003-09-04 2006-12-20 国立大学法人名古屋大学 発電方法及び電池
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
TWI394285B (zh) * 2009-06-08 2013-04-21 Univ Tatung 光電轉換裝置及其製法
KR101127609B1 (ko) * 2010-03-23 2012-03-22 삼성에스디아이 주식회사 실링재, 이를 구비한 염료 감응형 태양전지, 및 염료 감응형 태양전지 제조 방법
WO2012167282A1 (fr) * 2011-06-02 2012-12-06 Brown University Photodétecteurs compatibles avec le silicium à haut rendement à base de points quantiques de ge et d'hétéro-nanofils de ge/si
US20130048070A1 (en) * 2011-08-26 2013-02-28 Arash Hazeghi Tunnel photovoltaic
US9406824B2 (en) 2011-11-23 2016-08-02 Quswami, Inc. Nanopillar tunneling photovoltaic cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2304180A1 (fr) * 1975-07-28 1976-10-08 Rca Corp Dispositif semi-conducteur a region active en silicium amorphe

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US3577047A (en) * 1969-01-15 1971-05-04 Ibm Field effect device
US3916268A (en) * 1969-01-21 1975-10-28 Gen Electric Device for storing information and providing an electric readout from a conductor-insulator-semiconductor structure
US3631308A (en) * 1970-06-19 1971-12-28 Cogar Corp Mos semiconductor device operable with a positive or negative voltage on the gate electrode and method therefor
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4070206A (en) * 1976-05-20 1978-01-24 Rca Corporation Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2304180A1 (fr) * 1975-07-28 1976-10-08 Rca Corp Dispositif semi-conducteur a region active en silicium amorphe

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *
EXBK/78 *

Also Published As

Publication number Publication date
DE2826752A1 (de) 1979-02-15
GB1602007A (en) 1981-11-04
CA1104700A (fr) 1981-07-07
JPS5425187A (en) 1979-02-24
US4117506A (en) 1978-09-26

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