GB1493602A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1493602A GB1493602A GB2504474A GB2504474A GB1493602A GB 1493602 A GB1493602 A GB 1493602A GB 2504474 A GB2504474 A GB 2504474A GB 2504474 A GB2504474 A GB 2504474A GB 1493602 A GB1493602 A GB 1493602A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- type
- diode
- inclusions
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
Abstract
1493602 Semiconductor devices DEFENCE SECRETARY OF STATE FOR 27 Aug 1975 [5 June 1974] 25044/74 Heading H1K A "distributed diode", e.g. for use in an IMPATT travelling wave amplifier or an electron beam scanned device, in which an electromagnetic wave propagates along the longitudinal axis of the diode parallel to the junction, comprises a planar junction 27 between layers 24, 29 supported by a substrate 28 having anisotropic resistivity by virtue of discrete reduced resistivity inclusions 30 extending through the thickness of the substrate. In the device shown the substrate 28 is of N-type Si with N<SP>+</SP>-type P-diffused regions 30 formed therein prior to deposition of N-type layer 29 and B-diffusion to form P<SP>+</SP>-type layer 24. Au electrodes 20, 22 complete the diode. The inclusions 30 may, in plan view, comprise bars extending across the width of the substrate 28, chevrons, or spaced circular cross-section columns. The substrate 28 may alternatively be P-type.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2504474A GB1493602A (en) | 1975-08-27 | 1975-08-27 | Semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2504474A GB1493602A (en) | 1975-08-27 | 1975-08-27 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1493602A true GB1493602A (en) | 1977-11-30 |
Family
ID=10221318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2504474A Expired GB1493602A (en) | 1975-08-27 | 1975-08-27 | Semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1493602A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0143887A2 (en) * | 1983-08-31 | 1985-06-12 | Texas Instruments Incorporated | Distributed impatt structure |
US4525732A (en) * | 1983-08-31 | 1985-06-25 | Texas Instruments Incorporated | Distributed IMPATT structure |
US4568889A (en) * | 1983-08-31 | 1986-02-04 | Texas Instruments Incorporated | Distributed diode VCO with stripline coupled output and distributed variable capacitor control |
-
1975
- 1975-08-27 GB GB2504474A patent/GB1493602A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0143887A2 (en) * | 1983-08-31 | 1985-06-12 | Texas Instruments Incorporated | Distributed impatt structure |
US4525732A (en) * | 1983-08-31 | 1985-06-25 | Texas Instruments Incorporated | Distributed IMPATT structure |
US4568889A (en) * | 1983-08-31 | 1986-02-04 | Texas Instruments Incorporated | Distributed diode VCO with stripline coupled output and distributed variable capacitor control |
EP0143887A3 (en) * | 1983-08-31 | 1987-05-20 | Texas Instruments Incorporated | Distributed impatt structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2399130A1 (en) | SEMICONDUCTOR PHOTOVOLTAIC DEVICE | |
GB1514548A (en) | Multi-layer semiconductor photovoltaic device | |
KR890001232A (en) | Semiconductor devices | |
GB879977A (en) | Improvements in semi-conductor devices | |
US4101965A (en) | Surface acoustic wave devices for processing and storing signals | |
GB1526631A (en) | Semiconductor injection lasers | |
GB1530010A (en) | Highfrequency transistors | |
GB1493602A (en) | Semiconductor devices | |
GB995850A (en) | Piezoelectric devices | |
GB1318819A (en) | Superconducting devices | |
JPS57172778A (en) | Solar battery | |
GB1005218A (en) | Improvements in or relating to acoustic travelling wave amplifiers | |
GB973837A (en) | Improvements in semiconductor devices and methods of making same | |
GB1407062A (en) | Semiconductor devices | |
GB1126587A (en) | Improvements in or relating to control transistors | |
FR2356276A1 (en) | Semiconductor device with two layers of opposite conductivity - has one layer with zone of reduced thickness peripherally surrounding semiconductor device (NL 23.12.77) | |
Ludvik et al. | Nonlinear interaction of acoustic surface waves in epitaxial gallium arsenide | |
SE7707251L (en) | SEMICONDUCTOR CIRCUIT DIP | |
JP2961946B2 (en) | Electron wave interference device | |
GB1275091A (en) | Transit time diode oscillator | |
JPS55121678A (en) | Charge transfer device | |
US3530299A (en) | Optical device for responding to difference frequency of incident light beams | |
JPS55165676A (en) | Semiconductor device | |
JPS54120588A (en) | Gate turn-off thyristor | |
GB1518953A (en) | Charge coupled dircuit arrangements and devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |