JPS5745968A - Capacitor with double dielectric unit - Google Patents
Capacitor with double dielectric unitInfo
- Publication number
- JPS5745968A JPS5745968A JP56089765A JP8976581A JPS5745968A JP S5745968 A JPS5745968 A JP S5745968A JP 56089765 A JP56089765 A JP 56089765A JP 8976581 A JP8976581 A JP 8976581A JP S5745968 A JPS5745968 A JP S5745968A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- dielectric unit
- double dielectric
- double
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18274080A | 1980-08-29 | 1980-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5745968A true JPS5745968A (en) | 1982-03-16 |
JPS6349907B2 JPS6349907B2 (ja) | 1988-10-06 |
Family
ID=22669810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56089765A Granted JPS5745968A (en) | 1980-08-29 | 1981-06-12 | Capacitor with double dielectric unit |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0046868A3 (ja) |
JP (1) | JPS5745968A (ja) |
CA (1) | CA1159917A (ja) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5861634A (ja) * | 1981-10-09 | 1983-04-12 | Fujitsu Ltd | 半導体装置用誘電体層の製造方法 |
JPS594152A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5978553A (ja) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | キヤパシタおよびその製造方法 |
JPS59158512A (ja) * | 1983-03-01 | 1984-09-08 | 住友ベークライト株式会社 | 高誘電体薄膜コンデンサ |
JPS6066850A (ja) * | 1983-09-22 | 1985-04-17 | Sony Corp | Mis容量素子 |
JPS61150368A (ja) * | 1984-12-25 | 1986-07-09 | Nec Corp | 半導体装置 |
JPS61229350A (ja) * | 1985-04-04 | 1986-10-13 | Nec Corp | 高密度メモリ素子 |
JPH01102525A (ja) * | 1987-10-16 | 1989-04-20 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレー、その製造方法およびこれを用いた液晶表示装置 |
JPH02108029A (ja) * | 1988-10-17 | 1990-04-19 | Sharp Corp | アクティブマトリクス基板 |
JPH03227052A (ja) * | 1990-01-31 | 1991-10-08 | Mitsubishi Materials Corp | 高誘電体薄膜を形成した単結晶ウエハ |
JPH04223366A (ja) * | 1990-12-25 | 1992-08-13 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5316982A (en) * | 1991-10-18 | 1994-05-31 | Sharp Kabushiki Kaisha | Semiconductor device and method for preparing the same |
JP2002314072A (ja) * | 2001-04-19 | 2002-10-25 | Nec Corp | 高誘電体薄膜を備えた半導体装置及びその製造方法並びに誘電体膜の成膜装置 |
JP2003100908A (ja) * | 2001-09-14 | 2003-04-04 | Hynix Semiconductor Inc | 高誘電膜を備えた半導体素子及びその製造方法 |
JP2006140312A (ja) * | 2004-11-12 | 2006-06-01 | Shinko Electric Ind Co Ltd | 薄膜キャパシタおよびその製造方法 |
CN1329975C (zh) * | 2002-06-21 | 2007-08-01 | 海力士半导体有限公司 | 半导体器件的电容器的制造方法 |
US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
CN109467442A (zh) * | 2018-11-08 | 2019-03-15 | 中国科学院上海硅酸盐研究所 | 一种氮化硅陶瓷及其制备方法 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4437139A (en) * | 1982-12-17 | 1984-03-13 | International Business Machines Corporation | Laser annealed dielectric for dual dielectric capacitor |
US4464701A (en) * | 1983-08-29 | 1984-08-07 | International Business Machines Corporation | Process for making high dielectric constant nitride based materials and devices using the same |
WO1985003805A1 (en) * | 1984-02-21 | 1985-08-29 | Mosaic Systems, Inc. | Monolithic wafer having interconnection system including programmable interconnection layer |
US4698787A (en) * | 1984-11-21 | 1987-10-06 | Exel Microelectronics, Inc. | Single transistor electrically programmable memory device and method |
JP2617457B2 (ja) * | 1985-11-29 | 1997-06-04 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
US4888820A (en) * | 1988-12-06 | 1989-12-19 | Texas Instruments Incorporated | Stacked insulating film including yttrium oxide |
US5005102A (en) * | 1989-06-20 | 1991-04-02 | Ramtron Corporation | Multilayer electrodes for integrated circuit capacitors |
EP0412514A1 (en) * | 1989-08-08 | 1991-02-13 | Nec Corporation | Capacitance device |
US5126921A (en) * | 1990-07-06 | 1992-06-30 | Akira Fujishima | Electronic component and a method for manufacturing the same |
JPH05109329A (ja) * | 1991-04-01 | 1993-04-30 | General Electric Co <Ge> | 金属基体上の配向誘電体薄膜形成方法およびそれによる製品 |
JP2715736B2 (ja) * | 1991-06-28 | 1998-02-18 | 日本電気株式会社 | 半導体装置の製造方法 |
KR930012120B1 (ko) * | 1991-07-03 | 1993-12-24 | 삼성전자 주식회사 | 반도체장치 및 그의 제조방법 |
US5173835A (en) * | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
JPH05121655A (ja) * | 1991-10-25 | 1993-05-18 | Nec Corp | 半導体装置の製造方法 |
DE69315125T2 (de) * | 1992-06-18 | 1998-06-10 | Matsushita Electronics Corp | Herstellungsverfahren für Halbleiterbauelement mit Kondensator |
US5390072A (en) * | 1992-09-17 | 1995-02-14 | Research Foundation Of State University Of New York | Thin film capacitors |
CA2184724A1 (en) * | 1994-03-03 | 1995-09-08 | Shang-De Chang | Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase |
JP3012785B2 (ja) * | 1995-07-14 | 2000-02-28 | 松下電子工業株式会社 | 容量素子 |
GB2320128B (en) * | 1996-04-10 | 2001-11-14 | United Microelectronics Corp | Process for fabricating low leakage, current electrode for LPCVD itianium oxide films |
US5930584A (en) * | 1996-04-10 | 1999-07-27 | United Microelectronics Corp. | Process for fabricating low leakage current electrode for LPCVD titanium oxide films |
GB2347787A (en) * | 1998-12-04 | 2000-09-13 | Samsung Electronics Co Ltd | Method of forming a tantalum oxide containing capacitor |
GB2358284B (en) | 1999-07-02 | 2004-07-14 | Hyundai Electronics Ind | Method of manufacturing capacitor for semiconductor memory device |
JP2001177057A (ja) * | 1999-12-17 | 2001-06-29 | Tokyo Electron Ltd | アナログ回路用キャパシタ及びその製造方法 |
US6465297B1 (en) * | 2000-10-05 | 2002-10-15 | Motorola, Inc. | Method of manufacturing a semiconductor component having a capacitor |
CN100390945C (zh) * | 2002-03-29 | 2008-05-28 | 东京毅力科创株式会社 | 基底绝缘膜的形成方法 |
KR100947064B1 (ko) * | 2003-08-13 | 2010-03-10 | 삼성전자주식회사 | 반도체 장치의 커패시터 및 이를 구비하는 메모리 장치 |
EP1560269A1 (en) * | 2004-01-30 | 2005-08-03 | Alcatel | MOS capacitor in an integrated semiconductor circuit |
CN111033656A (zh) * | 2017-11-30 | 2020-04-17 | 株式会社村田制作所 | 电容器 |
CN112542543B (zh) * | 2019-09-20 | 2023-04-07 | 云谷(固安)科技有限公司 | 一种电容器和显示面板 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015175A (en) * | 1975-06-02 | 1977-03-29 | Texas Instruments Incorporated | Discrete, fixed-value capacitor |
US4190466A (en) * | 1977-12-22 | 1980-02-26 | International Business Machines Corporation | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
US4200474A (en) * | 1978-11-20 | 1980-04-29 | Texas Instruments Incorporated | Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication |
-
1981
- 1981-06-12 JP JP56089765A patent/JPS5745968A/ja active Granted
- 1981-07-07 CA CA000381245A patent/CA1159917A/en not_active Expired
- 1981-07-21 EP EP81105741A patent/EP0046868A3/en not_active Withdrawn
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5861634A (ja) * | 1981-10-09 | 1983-04-12 | Fujitsu Ltd | 半導体装置用誘電体層の製造方法 |
JPS594152A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5978553A (ja) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | キヤパシタおよびその製造方法 |
JPS59158512A (ja) * | 1983-03-01 | 1984-09-08 | 住友ベークライト株式会社 | 高誘電体薄膜コンデンサ |
JPH025006B2 (ja) * | 1983-03-01 | 1990-01-31 | Sumitomo Bakelite Co | |
JPS6066850A (ja) * | 1983-09-22 | 1985-04-17 | Sony Corp | Mis容量素子 |
JPS61150368A (ja) * | 1984-12-25 | 1986-07-09 | Nec Corp | 半導体装置 |
JPS61229350A (ja) * | 1985-04-04 | 1986-10-13 | Nec Corp | 高密度メモリ素子 |
JPH01102525A (ja) * | 1987-10-16 | 1989-04-20 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレー、その製造方法およびこれを用いた液晶表示装置 |
JPH02108029A (ja) * | 1988-10-17 | 1990-04-19 | Sharp Corp | アクティブマトリクス基板 |
JPH03227052A (ja) * | 1990-01-31 | 1991-10-08 | Mitsubishi Materials Corp | 高誘電体薄膜を形成した単結晶ウエハ |
US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
JPH04223366A (ja) * | 1990-12-25 | 1992-08-13 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5316982A (en) * | 1991-10-18 | 1994-05-31 | Sharp Kabushiki Kaisha | Semiconductor device and method for preparing the same |
JP2002314072A (ja) * | 2001-04-19 | 2002-10-25 | Nec Corp | 高誘電体薄膜を備えた半導体装置及びその製造方法並びに誘電体膜の成膜装置 |
JP2003100908A (ja) * | 2001-09-14 | 2003-04-04 | Hynix Semiconductor Inc | 高誘電膜を備えた半導体素子及びその製造方法 |
CN1329975C (zh) * | 2002-06-21 | 2007-08-01 | 海力士半导体有限公司 | 半导体器件的电容器的制造方法 |
JP2006140312A (ja) * | 2004-11-12 | 2006-06-01 | Shinko Electric Ind Co Ltd | 薄膜キャパシタおよびその製造方法 |
JP4510595B2 (ja) * | 2004-11-12 | 2010-07-28 | 新光電気工業株式会社 | 薄膜キャパシタおよびその製造方法 |
CN109467442A (zh) * | 2018-11-08 | 2019-03-15 | 中国科学院上海硅酸盐研究所 | 一种氮化硅陶瓷及其制备方法 |
CN109467442B (zh) * | 2018-11-08 | 2021-11-02 | 中国科学院上海硅酸盐研究所 | 一种氮化硅陶瓷及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0046868A3 (en) | 1984-12-05 |
CA1159917A (en) | 1984-01-03 |
JPS6349907B2 (ja) | 1988-10-06 |
EP0046868A2 (en) | 1982-03-10 |
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