JPS5739067B2 - - Google Patents

Info

Publication number
JPS5739067B2
JPS5739067B2 JP10422780A JP10422780A JPS5739067B2 JP S5739067 B2 JPS5739067 B2 JP S5739067B2 JP 10422780 A JP10422780 A JP 10422780A JP 10422780 A JP10422780 A JP 10422780A JP S5739067 B2 JPS5739067 B2 JP S5739067B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10422780A
Other versions
JPS5638873A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5638873A publication Critical patent/JPS5638873A/ja
Publication of JPS5739067B2 publication Critical patent/JPS5739067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
JP10422780A 1976-09-29 1980-07-28 Semiconductor device with amorphous silicon layer Granted JPS5638873A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/727,659 US4196438A (en) 1976-09-29 1976-09-29 Article and device having an amorphous silicon containing a halogen and method of fabrication

Publications (2)

Publication Number Publication Date
JPS5638873A JPS5638873A (en) 1981-04-14
JPS5739067B2 true JPS5739067B2 (ja) 1982-08-19

Family

ID=24923494

Family Applications (2)

Application Number Title Priority Date Filing Date
JP11658877A Granted JPS5342693A (en) 1976-09-29 1977-09-27 Semiconductor device including amorphous silicone layer
JP10422780A Granted JPS5638873A (en) 1976-09-29 1980-07-28 Semiconductor device with amorphous silicon layer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP11658877A Granted JPS5342693A (en) 1976-09-29 1977-09-27 Semiconductor device including amorphous silicone layer

Country Status (12)

Country Link
US (1) US4196438A (ja)
JP (2) JPS5342693A (ja)
AU (1) AU511235B2 (ja)
CA (1) CA1090454A (ja)
DE (1) DE2743141C2 (ja)
FR (1) FR2366701A1 (ja)
GB (1) GB1588452A (ja)
HK (1) HK77186A (ja)
IT (1) IT1087651B (ja)
NL (1) NL7710603A (ja)
SE (1) SE428980B (ja)
SU (1) SU1213994A3 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0131192B2 (ja) * 1981-02-09 1989-06-23 Ricoh Kk

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
US5073804A (en) * 1977-12-05 1991-12-17 Plasma Physics Corp. Method of forming semiconductor materials and barriers
US4492810A (en) * 1978-03-08 1985-01-08 Sovonics Solar Systems Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
US4485389A (en) * 1978-03-08 1984-11-27 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4839312A (en) * 1978-03-16 1989-06-13 Energy Conversion Devices, Inc. Fluorinated precursors from which to fabricate amorphous semiconductor material
US4409605A (en) * 1978-03-16 1983-10-11 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
JPS54163693A (en) * 1978-10-23 1979-12-26 Yamazaki Shunpei Semiconductor device for photovoltaic power generation
JPS5562778A (en) * 1978-11-02 1980-05-12 Fuji Photo Film Co Ltd Preparation of photoconductor film
GB2038086A (en) * 1978-12-19 1980-07-16 Standard Telephones Cables Ltd Amorphous semiconductor devices
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
FR2464564A1 (fr) * 1979-08-28 1981-03-06 Rca Corp Batterie solaire au silicium amorphe
DE2941559C2 (de) * 1979-10-13 1983-03-03 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Verfahren zum Abscheiden von Silizium auf einem Substrat
US4291318A (en) * 1979-12-03 1981-09-22 Exxon Research & Engineering Co. Amorphous silicon MIS device
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
JPS56165371A (en) * 1980-05-26 1981-12-18 Shunpei Yamazaki Semiconductor device
FR2487585A1 (fr) * 1980-07-25 1982-01-29 Thomson Csf Procede de realisation d'une couche en silicium amorphe et dispositif electronique mettant en oeuvre ce procede
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
JPS5730325A (en) * 1980-07-30 1982-02-18 Nec Corp Manufacture of amorphous silicon thin film
JPS5752178A (en) * 1980-09-13 1982-03-27 Canon Inc Photoconductive member
GB2088628B (en) * 1980-10-03 1985-06-12 Canon Kk Photoconductive member
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
DE3208494C2 (de) * 1981-03-09 1993-09-30 Canon Kk Verfahren zur Herstellung eines fotoleitfähigen Elements
JPS57152174A (en) * 1981-03-13 1982-09-20 Hitachi Ltd Manufacture of light receiving device
JPS5868965A (ja) * 1981-10-21 1983-04-25 Hitachi Ltd 受光素子の製造方法
JPS57160123A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Semiconductor device
US4490208A (en) * 1981-07-08 1984-12-25 Agency Of Industrial Science And Technology Method of producing thin films of silicon
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
JPS58101476A (ja) * 1981-12-11 1983-06-16 Sanyo Electric Co Ltd 光送受装置
JPH0620122B2 (ja) * 1982-01-19 1994-03-16 キヤノン株式会社 半導体素子
JPS58162075A (ja) * 1982-03-19 1983-09-26 Kanegafuchi Chem Ind Co Ltd 光起電力装置
US4517269A (en) * 1982-04-27 1985-05-14 Canon Kabushiki Kaisha Photoconductive member
JPS58204527A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 繊維構造を有する半導体およびその作製方法
DE3219606A1 (de) * 1982-05-25 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schottky-leistungsdiode
JPS5928385A (ja) * 1982-08-10 1984-02-15 Komatsu Denshi Kinzoku Kk 太陽電池の製造方法
JPS61255073A (ja) * 1985-05-07 1986-11-12 Semiconductor Energy Lab Co Ltd 半導体装置
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
JPS59115574A (ja) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS59119359A (ja) * 1982-12-27 1984-07-10 Canon Inc 電子写真用光導電部材
JPH0614560B2 (ja) * 1983-03-11 1994-02-23 キヤノン株式会社 フォトセンサ
JPS59197177A (ja) * 1984-03-16 1984-11-08 Shunpei Yamazaki 半導体装置
JPS6041269A (ja) * 1984-03-16 1985-03-04 Shunpei Yamazaki 半導体装置
JPH0636432B2 (ja) * 1984-03-21 1994-05-11 株式会社半導体エネルギー研究所 光電変換半導体装置
JPS6057680A (ja) * 1984-03-21 1985-04-03 Shunpei Yamazaki 半導体装置
JPS6057678A (ja) * 1984-03-21 1985-04-03 Shunpei Yamazaki 螢光灯電池
JPS6057616A (ja) * 1984-03-21 1985-04-03 Shunpei Yamazaki 半導体装置作製方法
JPS60100483A (ja) * 1984-04-13 1985-06-04 Shunpei Yamazaki 光起電力発生装置
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS614446U (ja) * 1984-06-13 1986-01-11 株式会社 半導体エネルギ−研究所 薄膜太陽電池
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JPS61116874A (ja) * 1985-09-20 1986-06-04 Shunpei Yamazaki 絶縁ゲート型電界効果トランジスタの製造方法
JPS6197863U (ja) * 1985-12-05 1986-06-23
US5246734A (en) * 1986-05-05 1993-09-21 Dow Corning Corporation Amorphous silicon hermetic coatings for optical wave guides
JPS6310573A (ja) * 1986-07-02 1988-01-18 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5082696A (en) * 1986-10-03 1992-01-21 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
JPS62169372A (ja) * 1987-01-09 1987-07-25 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
US4857976A (en) * 1987-06-30 1989-08-15 California Institute Of Technology Hydrogen-stabilized semiconductor devices
JPH0652799B2 (ja) * 1987-08-15 1994-07-06 株式会社半導体エネルギー研究所 半導体装置
EP0334110B1 (de) 1988-03-24 1993-09-15 Siemens Aktiengesellschaft Verfahren zum Herstellen von polykristallinen Schichten mit grobkristallinem Aufbau für Dünnschichthalbleiterbauelemente wie Solarzellen
US5238879A (en) * 1988-03-24 1993-08-24 Siemens Aktiengesellschaft Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells
JPH06905Y2 (ja) * 1988-06-29 1994-01-12 株式会社ニッカリ 刈取機
JPH03190283A (ja) * 1989-12-20 1991-08-20 Sanyo Electric Co Ltd 光起電力装置の形成方法
JP2632736B2 (ja) * 1990-03-12 1997-07-23 シャープ株式会社 薄膜半導体装置
JPH031577A (ja) * 1990-04-06 1991-01-08 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2573086B2 (ja) * 1990-08-24 1997-01-16 株式会社 半導体エネルギー研究所 半導体装置
JPH0462013U (ja) * 1990-10-05 1992-05-27
JP2541820Y2 (ja) * 1990-10-19 1997-07-23 株式会社丸山製作所 刈払機
JPH07153981A (ja) * 1992-02-14 1995-06-16 Semiconductor Energy Lab Co Ltd 連続的変化接合半導体装置およびその製法
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
KR970077745A (ko) * 1996-05-28 1997-12-12 장진 염소가 함유된 비정질 실리콘/비정질 실리콘 다층을 활성층으로 이용한 박막 트랜지스터의 구조 및 제조 방법
US20050268962A1 (en) * 2000-04-27 2005-12-08 Russell Gaudiana Flexible Photovoltaic cells, systems and methods
DE102006009953A1 (de) * 2006-03-03 2007-09-06 Wacker Chemie Ag Verfahren zur Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes
US8907385B2 (en) * 2012-12-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment for BSI image sensors
RU2635981C2 (ru) * 2015-12-28 2017-11-17 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) Способ нанесения тонкого слоя аморфного кремния

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5514553A (en) * 1978-07-19 1980-02-01 Hitachi Ltd Manufacture for magnetic head
JPS5564398A (en) * 1978-11-09 1980-05-15 Toshiba Corp X-ray automatic irradiation controller

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424661A (en) * 1966-09-01 1969-01-28 Bell Telephone Labor Inc Method of conducting chemical reactions in a glow discharge
US3922774A (en) * 1972-05-01 1975-12-02 Communications Satellite Corp Tantalum pentoxide anti-reflective coating
US3914856A (en) * 1972-06-05 1975-10-28 Fang Pao Hsien Economical solar cell for producing electricity
US3978333A (en) * 1974-04-15 1976-08-31 Everett Crisman Photovoltaic device having polycrystalline base
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
AU503228B2 (en) 1975-07-28 1979-08-30 Rca Corp. Semiconductor device
US4069492A (en) * 1976-08-23 1978-01-17 Rca Corporation Electroluminescent semiconductor device having a body of amorphous silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5514553A (en) * 1978-07-19 1980-02-01 Hitachi Ltd Manufacture for magnetic head
JPS5564398A (en) * 1978-11-09 1980-05-15 Toshiba Corp X-ray automatic irradiation controller

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0131192B2 (ja) * 1981-02-09 1989-06-23 Ricoh Kk

Also Published As

Publication number Publication date
NL7710603A (nl) 1978-03-31
DE2743141A1 (de) 1978-03-30
GB1588452A (en) 1981-04-23
CA1090454A (en) 1980-11-25
IT1087651B (it) 1985-06-04
JPS5514553B2 (ja) 1980-04-17
FR2366701B1 (ja) 1982-10-29
SE428980B (sv) 1983-08-01
SE7710553L (sv) 1978-03-30
SU1213994A3 (ru) 1986-02-23
FR2366701A1 (fr) 1978-04-28
JPS5638873A (en) 1981-04-14
HK77186A (en) 1986-10-24
DE2743141C2 (de) 1984-08-30
AU2795477A (en) 1979-02-22
US4196438A (en) 1980-04-01
AU511235B2 (en) 1980-08-07
JPS5342693A (en) 1978-04-18

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