JPS5730342A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5730342A JPS5730342A JP10447680A JP10447680A JPS5730342A JP S5730342 A JPS5730342 A JP S5730342A JP 10447680 A JP10447680 A JP 10447680A JP 10447680 A JP10447680 A JP 10447680A JP S5730342 A JPS5730342 A JP S5730342A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- stepped section
- semiconductor substrate
- etching
- 1mum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910021426 porous silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76245—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10447680A JPS5730342A (en) | 1980-07-30 | 1980-07-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10447680A JPS5730342A (en) | 1980-07-30 | 1980-07-30 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5730342A true JPS5730342A (en) | 1982-02-18 |
JPS6117144B2 JPS6117144B2 (enrdf_load_stackoverflow) | 1986-05-06 |
Family
ID=14381616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10447680A Granted JPS5730342A (en) | 1980-07-30 | 1980-07-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5730342A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6386467A (ja) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | 半導体装置 |
JP2007294857A (ja) * | 2006-03-28 | 2007-11-08 | Elpida Memory Inc | 半導体装置及びその製造方法 |
-
1980
- 1980-07-30 JP JP10447680A patent/JPS5730342A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6386467A (ja) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | 半導体装置 |
JP2007294857A (ja) * | 2006-03-28 | 2007-11-08 | Elpida Memory Inc | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6117144B2 (enrdf_load_stackoverflow) | 1986-05-06 |
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