JPS57194580A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS57194580A
JPS57194580A JP56080311A JP8031181A JPS57194580A JP S57194580 A JPS57194580 A JP S57194580A JP 56080311 A JP56080311 A JP 56080311A JP 8031181 A JP8031181 A JP 8031181A JP S57194580 A JPS57194580 A JP S57194580A
Authority
JP
Japan
Prior art keywords
input
gate
diode
storage
key type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56080311A
Other languages
Japanese (ja)
Inventor
Nobuyuki Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56080311A priority Critical patent/JPS57194580A/en
Publication of JPS57194580A publication Critical patent/JPS57194580A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To increase the input conductance by a method wherein the input gate and the storage gate are patterned upon the key type and the input diode is provided adjoining to the inside of the input gate. CONSTITUTION:The transfer electrode 11 and 12 are arranged on the P type semiconductor Si substrate 1 through the intermediary of the insulating film. The input gate 2 and the storage 4 are patterned upon the key type and the impurity dope layer operating as the input diode 13 is formed inside the input gate 2 forming the key type. The load generated by say the photoelectric conversion from the photo diode flows in the input diode 3 through the intermediary of the bonding wire 8 and transferred through the change transfer channel directly below the transfer electrodes 11 and 12 through the input gate 2 and the channel directly below the storage gate 4.
JP56080311A 1981-05-25 1981-05-25 Charge transfer device Pending JPS57194580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56080311A JPS57194580A (en) 1981-05-25 1981-05-25 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56080311A JPS57194580A (en) 1981-05-25 1981-05-25 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS57194580A true JPS57194580A (en) 1982-11-30

Family

ID=13714714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56080311A Pending JPS57194580A (en) 1981-05-25 1981-05-25 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS57194580A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085280A (en) * 1973-11-29 1975-07-09
JPS50114985A (en) * 1974-02-19 1975-09-09

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085280A (en) * 1973-11-29 1975-07-09
JPS50114985A (en) * 1974-02-19 1975-09-09

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