JPS5717496A - Liquid phase growing method for single crystal of compound semiconductor - Google Patents

Liquid phase growing method for single crystal of compound semiconductor

Info

Publication number
JPS5717496A
JPS5717496A JP9171580A JP9171580A JPS5717496A JP S5717496 A JPS5717496 A JP S5717496A JP 9171580 A JP9171580 A JP 9171580A JP 9171580 A JP9171580 A JP 9171580A JP S5717496 A JPS5717496 A JP S5717496A
Authority
JP
Japan
Prior art keywords
compound semiconductor
single crystal
melt
liquid phase
growing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9171580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6116759B2 (enrdf_load_stackoverflow
Inventor
Yoshio Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9171580A priority Critical patent/JPS5717496A/ja
Publication of JPS5717496A publication Critical patent/JPS5717496A/ja
Publication of JPS6116759B2 publication Critical patent/JPS6116759B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP9171580A 1980-07-07 1980-07-07 Liquid phase growing method for single crystal of compound semiconductor Granted JPS5717496A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9171580A JPS5717496A (en) 1980-07-07 1980-07-07 Liquid phase growing method for single crystal of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9171580A JPS5717496A (en) 1980-07-07 1980-07-07 Liquid phase growing method for single crystal of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5717496A true JPS5717496A (en) 1982-01-29
JPS6116759B2 JPS6116759B2 (enrdf_load_stackoverflow) 1986-05-01

Family

ID=14034200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9171580A Granted JPS5717496A (en) 1980-07-07 1980-07-07 Liquid phase growing method for single crystal of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5717496A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143952A (ja) * 1984-08-08 1986-03-03 株式会社　神戸屋 製パン法
JPH03275266A (ja) * 1990-03-23 1991-12-05 Mitsubishi Materials Corp 二層鋳物の鋳造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143952A (ja) * 1984-08-08 1986-03-03 株式会社　神戸屋 製パン法
JPH03275266A (ja) * 1990-03-23 1991-12-05 Mitsubishi Materials Corp 二層鋳物の鋳造方法

Also Published As

Publication number Publication date
JPS6116759B2 (enrdf_load_stackoverflow) 1986-05-01

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