JPS6116759B2 - - Google Patents
Info
- Publication number
- JPS6116759B2 JPS6116759B2 JP9171580A JP9171580A JPS6116759B2 JP S6116759 B2 JPS6116759 B2 JP S6116759B2 JP 9171580 A JP9171580 A JP 9171580A JP 9171580 A JP9171580 A JP 9171580A JP S6116759 B2 JPS6116759 B2 JP S6116759B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- liquid phase
- phase growth
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 37
- 239000007791 liquid phase Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000155 melt Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 17
- 229910052733 gallium Inorganic materials 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 229910005540 GaP Inorganic materials 0.000 description 14
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 14
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 229910052717 sulfur Inorganic materials 0.000 description 10
- 239000011593 sulfur Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9171580A JPS5717496A (en) | 1980-07-07 | 1980-07-07 | Liquid phase growing method for single crystal of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9171580A JPS5717496A (en) | 1980-07-07 | 1980-07-07 | Liquid phase growing method for single crystal of compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5717496A JPS5717496A (en) | 1982-01-29 |
| JPS6116759B2 true JPS6116759B2 (enrdf_load_stackoverflow) | 1986-05-01 |
Family
ID=14034200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9171580A Granted JPS5717496A (en) | 1980-07-07 | 1980-07-07 | Liquid phase growing method for single crystal of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5717496A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6143952A (ja) * | 1984-08-08 | 1986-03-03 | 株式会社 神戸屋 | 製パン法 |
| JPH07112617B2 (ja) * | 1990-03-23 | 1995-12-06 | 三菱マテリアル株式会社 | 二層鋳物の鋳造方法 |
-
1980
- 1980-07-07 JP JP9171580A patent/JPS5717496A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5717496A (en) | 1982-01-29 |
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