JPH0218319B2 - - Google Patents

Info

Publication number
JPH0218319B2
JPH0218319B2 JP57141896A JP14189682A JPH0218319B2 JP H0218319 B2 JPH0218319 B2 JP H0218319B2 JP 57141896 A JP57141896 A JP 57141896A JP 14189682 A JP14189682 A JP 14189682A JP H0218319 B2 JPH0218319 B2 JP H0218319B2
Authority
JP
Japan
Prior art keywords
layer
type
substrate
melt
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57141896A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5930797A (ja
Inventor
Toshifumi Ito
Juki Tamura
Toshiharu Takahashi
Akio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP14189682A priority Critical patent/JPS5930797A/ja
Publication of JPS5930797A publication Critical patent/JPS5930797A/ja
Publication of JPH0218319B2 publication Critical patent/JPH0218319B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14189682A 1982-08-16 1982-08-16 液相エピタキシヤル成長方法 Granted JPS5930797A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14189682A JPS5930797A (ja) 1982-08-16 1982-08-16 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14189682A JPS5930797A (ja) 1982-08-16 1982-08-16 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS5930797A JPS5930797A (ja) 1984-02-18
JPH0218319B2 true JPH0218319B2 (enrdf_load_stackoverflow) 1990-04-25

Family

ID=15302680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14189682A Granted JPS5930797A (ja) 1982-08-16 1982-08-16 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS5930797A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08168413A (ja) * 1990-01-19 1996-07-02 Reboul Smt 制動装置を備えたスティック状製品用ケース
DE19549588C2 (de) * 1995-03-17 2002-12-19 Showa Denko Kk Verfahren zu Herstellung einer Epitaxialstruktur für eine lichtemittierende GaP-Diode

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833479B2 (ja) * 1994-06-16 1998-12-09 信越半導体株式会社 液相エピタキシャル成長法ＧａＰ単結晶層中のＳｉ濃度制御方法
CN104328487A (zh) * 2014-10-16 2015-02-04 中国科学院上海技术物理研究所 一种具有纯化母液功能的双衬底槽液相外延石墨舟

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846876B2 (ja) * 1976-06-18 1983-10-19 三菱電機株式会社 リン化ガリウム発光素子の製造方法
JPS5437472A (en) * 1977-08-29 1979-03-19 Hitachi Ltd Manufacture of semiconductor
JPS5453977A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element
JPS5831739B2 (ja) * 1978-04-07 1983-07-08 株式会社東芝 燐化ガリウム緑色発光素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08168413A (ja) * 1990-01-19 1996-07-02 Reboul Smt 制動装置を備えたスティック状製品用ケース
DE19549588C2 (de) * 1995-03-17 2002-12-19 Showa Denko Kk Verfahren zu Herstellung einer Epitaxialstruktur für eine lichtemittierende GaP-Diode

Also Published As

Publication number Publication date
JPS5930797A (ja) 1984-02-18

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