JPH0525396B2 - - Google Patents
Info
- Publication number
- JPH0525396B2 JPH0525396B2 JP29913886A JP29913886A JPH0525396B2 JP H0525396 B2 JPH0525396 B2 JP H0525396B2 JP 29913886 A JP29913886 A JP 29913886A JP 29913886 A JP29913886 A JP 29913886A JP H0525396 B2 JPH0525396 B2 JP H0525396B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- gap layer
- type
- temperature
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 43
- 239000007791 liquid phase Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 description 125
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 125
- 239000010410 layer Substances 0.000 description 118
- 239000013078 crystal Substances 0.000 description 46
- 238000010583 slow cooling Methods 0.000 description 27
- 239000012535 impurity Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 238000009826 distribution Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61299138A JPS63151086A (ja) | 1986-12-16 | 1986-12-16 | ガリウム燐緑色発光ダイオ−ドの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61299138A JPS63151086A (ja) | 1986-12-16 | 1986-12-16 | ガリウム燐緑色発光ダイオ−ドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63151086A JPS63151086A (ja) | 1988-06-23 |
| JPH0525396B2 true JPH0525396B2 (enrdf_load_stackoverflow) | 1993-04-12 |
Family
ID=17868610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61299138A Granted JPS63151086A (ja) | 1986-12-16 | 1986-12-16 | ガリウム燐緑色発光ダイオ−ドの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63151086A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0220077A (ja) * | 1988-07-08 | 1990-01-23 | Toshiba Corp | 緑色発光ダイオードの製造方法 |
-
1986
- 1986-12-16 JP JP61299138A patent/JPS63151086A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63151086A (ja) | 1988-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06105797B2 (ja) | 半導体基板及びその製造方法 | |
| KR100296094B1 (ko) | 갈륨인화물녹색발광장치 | |
| JP3324102B2 (ja) | エピタキシャルウェーハの製造方法 | |
| JPH0525396B2 (enrdf_load_stackoverflow) | ||
| JPH0260209B2 (enrdf_load_stackoverflow) | ||
| US3619304A (en) | Method of manufacturing gallium phosphide electro luminescent diodes | |
| JPH0531316B2 (enrdf_load_stackoverflow) | ||
| JPH0218319B2 (enrdf_load_stackoverflow) | ||
| US6388274B1 (en) | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same | |
| JPH1197740A (ja) | ＧａＰ発光ダイオード用エピタキシャルウェーハおよびＧａＰ発光ダイオード | |
| JPH0242771A (ja) | 発光半導体素子基板及びその製造方法 | |
| JP3797124B2 (ja) | ｎ型ＧａＰ単結晶基板、その製造方法、ＧａＰ緑色系発光ダイオード用エピタキシャル基板およびＧａＰ緑色系発光ダイオード | |
| JP4570728B2 (ja) | 半導体発光素子用エピタキシャルウェハ | |
| JP4319291B2 (ja) | 半導体発光素子用エピタキシャル基板及び発光素子 | |
| JP2705016B2 (ja) | ＩｎＰ系化合物半導体装置 | |
| JPS6012794B2 (ja) | 電気発光物質の製造方法 | |
| JPH01315174A (ja) | 半導体発光装置 | |
| JP3097587B2 (ja) | 発光半導体素子用エピタキシャルウェーハ | |
| JP2000143398A (ja) | ＧａＰ単結晶基板及びその製造方法並びにＧａＰ発光ダイオ―ドの製造方法 | |
| JPS59214277A (ja) | リン化ガリウム純緑色発光素子 | |
| JPS63304617A (ja) | 化合物半導体結晶の成長方法 | |
| JPS5814400B2 (ja) | 燐化ガリウム赤色発光素子の液相成長法 | |
| JPH058155B2 (enrdf_load_stackoverflow) | ||
| JP2006128279A (ja) | 液相成長方法及び液相成長装置 | |
| JPH06224473A (ja) | ＺｎＳｅを主成分としたｐｎ接合の製造方法並びにｐｎ接合デバイスの製造方法 |