JPH0260209B2 - - Google Patents
Info
- Publication number
- JPH0260209B2 JPH0260209B2 JP28105686A JP28105686A JPH0260209B2 JP H0260209 B2 JPH0260209 B2 JP H0260209B2 JP 28105686 A JP28105686 A JP 28105686A JP 28105686 A JP28105686 A JP 28105686A JP H0260209 B2 JPH0260209 B2 JP H0260209B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- metal solution
- compound semiconductor
- type region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 45
- 239000007791 liquid phase Substances 0.000 claims description 25
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical group [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 24
- 229910005540 GaP Inorganic materials 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 21
- 230000007423 decrease Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 238000010583 slow cooling Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281056A JPS63133619A (ja) | 1986-11-26 | 1986-11-26 | 化合物半導体の液相エピタキシヤル成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281056A JPS63133619A (ja) | 1986-11-26 | 1986-11-26 | 化合物半導体の液相エピタキシヤル成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63133619A JPS63133619A (ja) | 1988-06-06 |
| JPH0260209B2 true JPH0260209B2 (enrdf_load_stackoverflow) | 1990-12-14 |
Family
ID=17633691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61281056A Granted JPS63133619A (ja) | 1986-11-26 | 1986-11-26 | 化合物半導体の液相エピタキシヤル成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133619A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0579919U (ja) * | 1992-03-31 | 1993-10-29 | 株式会社トーキン | ベース |
-
1986
- 1986-11-26 JP JP61281056A patent/JPS63133619A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0579919U (ja) * | 1992-03-31 | 1993-10-29 | 株式会社トーキン | ベース |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63133619A (ja) | 1988-06-06 |
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