JP7133786B2 - Iii族窒化物半導体およびその製造方法 - Google Patents
Iii族窒化物半導体およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 80
- 239000013078 crystal Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 16
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000007790 solid phase Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 4
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 239000002070 nanowire Substances 0.000 description 34
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 16
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- -1 AlN layers Chemical class 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009546 growth abnormality Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002796 luminescence method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
図1に本開示の実施形態に係るIII族窒化物半導体の断面模式図を示す。当該III族窒化物半導体は、一般式RAMO4で表される単結晶体(一般式において、Rは、Sc、In、Y、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、Aは、Fe(III)、Ga、およびAlからなる群から選択される一つまたは複数の三価の元素を表し、Mは、Mg、Mn、Fe(II)、Co、Cu、Zn、およびCdからなる群から選択される一つまたは複数の二価の元素を表し、Oは酸素を表す)からなるRAMO4基板101と、当該RAMO4基板101上に配されたp型III族窒化物結晶層102と、当該p型III族窒化物結晶層102上に配され、互いに分離した複数のn型III族窒化物結晶層103と、複数のn型III族窒化物結晶層103上に配されたIII族窒化物結晶層104と、を有する。当該III族窒化物半導体により、欠陥密度が低い、高品質なIII族窒化物半導体を実現できる。
102 p型III族窒化物結晶層
103 n型III族窒化物結晶層
104 III族窒化物結晶層
201 RAMO4(ScAlMgO4)基板
202 p型GaN層
203 n型GaN層
204 n型GaNナノワイヤ層
205 GaN層
206 劈開位置
Claims (5)
- 一般式RAMO4で表される単結晶体(一般式において、Rは、Sc、In、Y、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、Aは、Fe(III)、Ga、およびAlからなる群から選択される一つまたは複数の三価の元素を表し、Mは、Mg、Mn、Fe(II)、Co、Cu、Zn、およびCdからなる群から選択される一つまたは複数の二価の元素を表す)からなるRAMO4基板と、
前記RAMO4基板上に配されたp型III族窒化物結晶層と、
前記p型III族窒化物結晶層上に配された複数のn型III族窒化物結晶層と、
前記複数のn型III族窒化物結晶層上に配されたIII族窒化物結晶層と、
を有し、
前記複数のn型III族窒化物結晶層が、隣り合う前記n型III族窒化物結晶層の間に前記p型III族窒化物結晶層の一部が露出するように、互いに分離して配置されており、
前記複数のn型III族窒化物結晶層の間に露出する前記p型III族窒化物結晶層の表面と、前記p型III族窒化物結晶層および前記n型III族窒化物結晶層の界面とが、同一平面上にある、
III族窒化物半導体。 - 前記p型III族窒化物結晶層は、前記一般式においてMで表される原子を含む、請求項1に記載のIII属窒化物半導体。
- 前記p型III族窒化物結晶層中の、前記一般式においてMで表される原子の濃度が、前記n型III族窒化物結晶層側と比べて前記RAMO4基板側の方が高い、請求項2に記載のIII族窒化物半導体。
- 前記一般式においてMで表される原子はMgである、請求項3に記載のIII族窒化物半導体。
- 一般式RAMO4で表される単結晶体(一般式において、Rは、Sc、In、Y、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、Aは、Fe(III)、Ga、およびAlからなる群から選択される一つまたは複数の三価の元素を表し、Mは、Mg、Mn、Fe(II)、Co、Cu、Zn、およびCdからなる群から選択される一つまたは複数の二価の元素を表す)からなるRAMO4基板を準備する工程と、
前記RAMO4基板上にp型III族窒化物結晶層およびn型III族窒化物結晶層をこの順に成長させる工程と、
前記n型III族窒化物結晶層の一部を、前記n型III族窒化物結晶層および前記p型III族窒化物結晶層の界面までエッチング除去する工程と、
前記エッチング除去の後に、前記n型III族窒化物結晶層上にIII族窒化物半導体結晶を成長させる工程と、を備え、
前記p型III族窒化物結晶層を成長させるに際し、前記p型III族窒化物結晶層中に前記RAMO4基板から前記一般式においてMで表される原子を固相拡散させ、
前記n型III族窒化物結晶層をエッチングするに際し、前記p型III族窒化物結晶層でエッチングを抑制する、III族窒化物半導体の製造方法。
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JP2017183697A (ja) | 2016-03-23 | 2017-10-05 | パナソニックIpマネジメント株式会社 | Iii族窒化物半導体及びその製造方法 |
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JP4204163B2 (ja) * | 2000-02-03 | 2009-01-07 | 株式会社リコー | 半導体基板の製造方法 |
EP1265273A4 (en) * | 2000-03-14 | 2009-05-06 | Toyoda Gosei Kk | PROCESS FOR PRODUCING NITRIDE III COMPOUND SEMICONDUCTOR AND SEMICONDUCTOR COMPONENT BASED ON NITRIDE III COMPOUND |
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